ELECTRIC FIELD DEPENDENT CONDUCTIVITY OF METALLIC POLYACETYLENE.

A. J. Epstein; H. W. Gibson; P. M. Chaikin; W. G. Clark; G. Gruener

ELECTRIC FIELD DEPENDENT CONDUCTIVITY OF METALLIC POLYACETYLENE.

A. J. Epstein, H. W. Gibson, P. M. Chaikin, W. G. Clark, G. Gruener

Research output: Contribution to journal › Conference article › peer-review

Abstract

The electrical conductivity ( sigma ) of polyacetylene, (CH)//x, increases rapidly upon doping, evolving from insulator to metal with exposure to many donors and acceptors. The lack of a sharp insulator-metal transition and the decrease in sigma at low temperature(T) is usually thought due to interfiber contacts or undoped regions resulting in small metal particles in a dielectric medium. The T, f, and electric field (E) dependent sigma of iodine doped (CH)//x are presented for the concentration regime which spans the metal-insulator transition.

Original language	English (US)
Pages (from-to)	135-136
Number of pages	2
Journal	Chemica scripta
Volume	17
Issue number	1-5
State	Published - 1980
Event	Int Conf of Low Dimens Synth Met - Helsingor, Den Duration: Aug 10 1980 → Aug 15 1980

ASJC Scopus subject areas

General Engineering

Cite this

@article{b16d3823163a4ab3b8c3704fa7d723c9,

title = "ELECTRIC FIELD DEPENDENT CONDUCTIVITY OF METALLIC POLYACETYLENE.",

abstract = "The electrical conductivity ( sigma ) of polyacetylene, (CH)//x, increases rapidly upon doping, evolving from insulator to metal with exposure to many donors and acceptors. The lack of a sharp insulator-metal transition and the decrease in sigma at low temperature(T) is usually thought due to interfiber contacts or undoped regions resulting in small metal particles in a dielectric medium. The T, f, and electric field (E) dependent sigma of iodine doped (CH)//x are presented for the concentration regime which spans the metal-insulator transition.",

author = "Epstein, {A. J.} and Gibson, {H. W.} and Chaikin, {P. M.} and Clark, {W. G.} and G. Gruener",

year = "1980",

language = "English (US)",

volume = "17",

pages = "135--136",

journal = "Chemica scripta",

issn = "0004-2056",

number = "1-5",

note = "Int Conf of Low Dimens Synth Met ; Conference date: 10-08-1980 Through 15-08-1980",

}

TY - JOUR

T1 - ELECTRIC FIELD DEPENDENT CONDUCTIVITY OF METALLIC POLYACETYLENE.

AU - Epstein, A. J.

AU - Gibson, H. W.

AU - Chaikin, P. M.

AU - Clark, W. G.

AU - Gruener, G.

PY - 1980

Y1 - 1980

N2 - The electrical conductivity ( sigma ) of polyacetylene, (CH)//x, increases rapidly upon doping, evolving from insulator to metal with exposure to many donors and acceptors. The lack of a sharp insulator-metal transition and the decrease in sigma at low temperature(T) is usually thought due to interfiber contacts or undoped regions resulting in small metal particles in a dielectric medium. The T, f, and electric field (E) dependent sigma of iodine doped (CH)//x are presented for the concentration regime which spans the metal-insulator transition.

AB - The electrical conductivity ( sigma ) of polyacetylene, (CH)//x, increases rapidly upon doping, evolving from insulator to metal with exposure to many donors and acceptors. The lack of a sharp insulator-metal transition and the decrease in sigma at low temperature(T) is usually thought due to interfiber contacts or undoped regions resulting in small metal particles in a dielectric medium. The T, f, and electric field (E) dependent sigma of iodine doped (CH)//x are presented for the concentration regime which spans the metal-insulator transition.

UR - http://www.scopus.com/inward/record.url?scp=0019092648&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019092648&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0019092648

SN - 0004-2056

VL - 17

SP - 135

EP - 136

JO - Chemica scripta

JF - Chemica scripta

IS - 1-5

T2 - Int Conf of Low Dimens Synth Met

Y2 - 10 August 1980 through 15 August 1980

ER -

ELECTRIC FIELD DEPENDENT CONDUCTIVITY OF METALLIC POLYACETYLENE.

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this