Electrical resistivity of metallic thin films with rough surfaces

K. M. Leung

    Research output: Contribution to journalArticlepeer-review


    The electrical resistivity of metallic thin films due to the scattering of conduction electrons with rough surfaces and with a random distribution of static impurities within the film is calculated here quantum mechanically using Mori's formalism. The detailed profiles of the surfaces enter into our theory through the single-particle wave functions and energies, which are calculated with the help of a nonconformal coordinate transformation. A detailed analysis of the roughness contribution to the resistivity is made in the small-roughness regime and with the assumption of a Gaussian form for the surface profile autocorrelation functions. The structures of the Fermi levels are studied, and effects due to the discreteness of the levels are also investigated. Our surface-roughness resistivity does not saturate with decreasing film thickness, in agreement with experimental findings.

    Original languageEnglish (US)
    Pages (from-to)647-658
    Number of pages12
    JournalPhysical Review B
    Issue number2
    StatePublished - 1984

    ASJC Scopus subject areas

    • Condensed Matter Physics


    Dive into the research topics of 'Electrical resistivity of metallic thin films with rough surfaces'. Together they form a unique fingerprint.

    Cite this