Electronic stopping power model for Monte Carlo and molecular dynamics simulation of ion implantation into silicon

Keyphrases

• Molecular Dynamics Simulation 100%
• Electronic Stopping Power 100%
• Power Model 100%
• Monte Carlo Dynamics 100%
• Ion Implantation 100%
• Effective Charge 40%
• Secondary Ion Mass Spectrometry 40%
• Dopant Profile 40%
• Molecular Dynamics 20%
• Boron 20%
• Proton 20%
• Monte Carlo Simulation 20%
• Damping Mechanism 20%
• Phenomenological Models 20%
• Parameter-free 20%
• Power Regimes 20%
• Charge Density 20%
• Arsenic 20%
• Density Dependence 20%
• Physically-based 20%
• Factorized 20%
• Local Charge 20%
• Electron Radius 20%
• Crystalline Silicon 20%
• Profile Simulation 20%
• Incident Direction 20%

Material Science

• Silicon 100%
• Ion Implantation 100%
• Secondary Ion Mass Spectrometry 100%
• Doping (Additives) 100%
• Density 50%
• Crystalline Material 50%
• Boron 50%
• Arsenic 50%

Physics

• Monte Carlo 100%
• Molecular Dynamics 100%
• Stopping Power 100%
• Ion Implantation 100%
• Spectrometer 40%
• Physics 20%
• Monte Carlo Simulation 20%