Engineering semiconductor heterostructures for TeraHertz radiation

R. M. Gutiérrez, M. A. Camargo, A. S. Camacho

Research output: Contribution to journalConference articlepeer-review

Abstract

This work presents an extensive calculation of parameters of semiconductor heterostructures in the ranges where TeraHertz radiation may be generated. In a previous work [Gutiérrez and Camacho, Phys. Stat. Sol. A 195, 600 (2003).] a model was presented to describe the carrier dynamics of semiconductor hetero- structures as sources of THz radiation. In this model the solutions are very sensitive to the geometric parameters of the asymmetric Double Quantum Well representing the semiconductor heterostructure. The model gives a good description of the TeraHertz radiation observed in laboratories and originated in microscopic processes. Therefore, the model allows us to control the TeraHertz radiation through the engineering of the semiconductor heterostructures. The results of this work give precise specifications of the semiconductor heterostructures suitable to generate TeraHertz radiation that can be verified in the laboratory.

Original languageEnglish (US)
Pages (from-to)233-236
Number of pages4
JournalPhysica Scripta T
VolumeT118
DOIs
StatePublished - 2005
Event1st International Meeting on Applied Physics, APHYS-2003 - Badajoz, Spain
Duration: Oct 13 2003Oct 18 2003

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Engineering semiconductor heterostructures for TeraHertz radiation'. Together they form a unique fingerprint.

Cite this