Engineering semiconductor heterostructures for TeraHertz radiation

This work presents an extensive calculation of parameters of semiconductor heterostructures in the ranges where TeraHertz radiation may be generated. In a previous work [Gutiérrez and Camacho, Phys. Stat. Sol. A 195, 600 (2003).] a model was presented to describe the carrier dynamics of semiconductor hetero- structures as sources of THz radiation. In this model the solutions are very sensitive to the geometric parameters of the asymmetric Double Quantum Well representing the semiconductor heterostructure. The model gives a good description of the TeraHertz radiation observed in laboratories and originated in microscopic processes. Therefore, the model allows us to control the TeraHertz radiation through the engineering of the semiconductor heterostructures. The results of this work give precise specifications of the semiconductor heterostructures suitable to generate TeraHertz radiation that can be verified in the laboratory.