Enhanced channel mobility materials for MOSFETs on Si substrates

J. P. Donnelly, D. Shahrjerdi, D. Q. Kelly, E. Tutuc, S. K. Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

MOS high-k/metal devices with Ge and GaAs semiconductors were used to fabricate PMOS and NMOS devices, respectively. Selective, epitaxially grown (SEG) Ge PMOSFETs exhibit a 2× enhanced IDsat, and greater than 2× improvement in hole mobility compared to Si PMOSFETs. Buried-channel (BC) Ge1-xCx PMOSFETs showed a 2× enhancemsnt in IDsat over Si control PMOSFET and ∼1.5× improvement in effective mobility over universal curve for Si. The corresponding enhancement for surface channel (SC) Ge1-xCx PMOSFETs was 3times; and ∼2.5times;, respectively. The Ion/Ioff ratio for (BC) Ge1-xCx was greater than 5×104. GaAs NMOS capacitors using two different chemical surface treatments NH4OH and (NH4)2S prior to ALD-Al2O3 deposition were examined. Both treatments remove AS2O 3/AS2O6 upon Al2O3 deposition and unpinned the Al2O3/GaAs interface. However (NH4)2S has better frequency dispersion behavior and slightly smaller capacitance equivalent thickness (CET) than NH4OH treatment. Quasi-static CV measurement confirmed formation of a true inversion layer in GaAs.

Original languageEnglish (US)
Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
Pages47-60
Number of pages14
Edition6
DOIs
StatePublished - 2007
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 7 2007Oct 12 2007

Publication series

NameECS Transactions
Number6
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/7/0710/12/07

ASJC Scopus subject areas

  • Engineering(all)

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