Enhanced channel mobility materials for MOSFETs on Si substrates

J. P. Donnelly; D. Shahrjerdi; D. Q. Kelly; E. Tutuc; S. K. Banerjee

doi:10.1149/1.2780764

Enhanced channel mobility materials for MOSFETs on Si substrates

J. P. Donnelly, D. Shahrjerdi, D. Q. Kelly, E. Tutuc, S. K. Banerjee

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

MOS high-k/metal devices with Ge and GaAs semiconductors were used to fabricate PMOS and NMOS devices, respectively. Selective, epitaxially grown (SEG) Ge PMOSFETs exhibit a 2× enhanced I_Dsat, and greater than 2× improvement in hole mobility compared to Si PMOSFETs. Buried-channel (BC) Ge_1-xC_x PMOSFETs showed a 2× enhancemsnt in I_Dsat over Si control PMOSFET and ∼1.5× improvement in effective mobility over universal curve for Si. The corresponding enhancement for surface channel (SC) Ge_1-xC_x PMOSFETs was 3times; and ∼2.5times;, respectively. The I_on/I_off ratio for (BC) Ge_1-xC_x was greater than 5×10⁴. GaAs NMOS capacitors using two different chemical surface treatments NH⁴OH and (NH⁴)²S prior to ALD-Al₂O₃ deposition were examined. Both treatments remove AS₂O ₃/AS₂O₆ upon Al₂O₃ deposition and unpinned the Al₂O₃/GaAs interface. However (NH₄)₂S has better frequency dispersion behavior and slightly smaller capacitance equivalent thickness (CET) than NH₄OH treatment. Quasi-static CV measurement confirmed formation of a true inversion layer in GaAs.

Original language	English (US)
Title of host publication	ECS Transactions - 5th International Symposium on ULSI Process Integration
Publisher	Electrochemical Society Inc.
Pages	47-60
Number of pages	14
Edition	6
ISBN (Electronic)	9781566775724
ISBN (Print)	9781566775724
DOIs	https://doi.org/10.1149/1.2780764
State	Published - 2007
Event	5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States Duration: Oct 7 2007 → Oct 12 2007

Publication series

Name	ECS Transactions
Number	6
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on ULSI Process Integration - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	10/7/07 → 10/12/07

ASJC Scopus subject areas

General Engineering

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10.1149/1.2780764

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Enhanced channel mobility materials for MOSFETs on Si substrates. / Donnelly, J. P.; Shahrjerdi, D.; Kelly, D. Q. et al.
ECS Transactions - 5th International Symposium on ULSI Process Integration. 6. ed. Electrochemical Society Inc., 2007. p. 47-60 (ECS Transactions; Vol. 11, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Donnelly, JP, Shahrjerdi, D, Kelly, DQ, Tutuc, E & Banerjee, SK 2007, Enhanced channel mobility materials for MOSFETs on Si substrates. in ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 edn, ECS Transactions, no. 6, vol. 11, Electrochemical Society Inc., pp. 47-60, 5th International Symposium on ULSI Process Integration - 212th ECS Meeting, Washington, DC, United States, 10/7/07. https://doi.org/10.1149/1.2780764

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abstract = "MOS high-k/metal devices with Ge and GaAs semiconductors were used to fabricate PMOS and NMOS devices, respectively. Selective, epitaxially grown (SEG) Ge PMOSFETs exhibit a 2× enhanced IDsat, and greater than 2× improvement in hole mobility compared to Si PMOSFETs. Buried-channel (BC) Ge1-xCx PMOSFETs showed a 2× enhancemsnt in IDsat over Si control PMOSFET and ∼1.5× improvement in effective mobility over universal curve for Si. The corresponding enhancement for surface channel (SC) Ge1-xCx PMOSFETs was 3times; and ∼2.5times;, respectively. The Ion/Ioff ratio for (BC) Ge1-xCx was greater than 5×104. GaAs NMOS capacitors using two different chemical surface treatments NH4OH and (NH4)2S prior to ALD-Al2O3 deposition were examined. Both treatments remove AS2O 3/AS2O6 upon Al2O3 deposition and unpinned the Al2O3/GaAs interface. However (NH4)2S has better frequency dispersion behavior and slightly smaller capacitance equivalent thickness (CET) than NH4OH treatment. Quasi-static CV measurement confirmed formation of a true inversion layer in GaAs.",

author = "Donnelly, {J. P.} and D. Shahrjerdi and Kelly, {D. Q.} and E. Tutuc and Banerjee, {S. K.}",

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AU - Banerjee, S. K.

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N2 - MOS high-k/metal devices with Ge and GaAs semiconductors were used to fabricate PMOS and NMOS devices, respectively. Selective, epitaxially grown (SEG) Ge PMOSFETs exhibit a 2× enhanced IDsat, and greater than 2× improvement in hole mobility compared to Si PMOSFETs. Buried-channel (BC) Ge1-xCx PMOSFETs showed a 2× enhancemsnt in IDsat over Si control PMOSFET and ∼1.5× improvement in effective mobility over universal curve for Si. The corresponding enhancement for surface channel (SC) Ge1-xCx PMOSFETs was 3times; and ∼2.5times;, respectively. The Ion/Ioff ratio for (BC) Ge1-xCx was greater than 5×104. GaAs NMOS capacitors using two different chemical surface treatments NH4OH and (NH4)2S prior to ALD-Al2O3 deposition were examined. Both treatments remove AS2O 3/AS2O6 upon Al2O3 deposition and unpinned the Al2O3/GaAs interface. However (NH4)2S has better frequency dispersion behavior and slightly smaller capacitance equivalent thickness (CET) than NH4OH treatment. Quasi-static CV measurement confirmed formation of a true inversion layer in GaAs.

AB - MOS high-k/metal devices with Ge and GaAs semiconductors were used to fabricate PMOS and NMOS devices, respectively. Selective, epitaxially grown (SEG) Ge PMOSFETs exhibit a 2× enhanced IDsat, and greater than 2× improvement in hole mobility compared to Si PMOSFETs. Buried-channel (BC) Ge1-xCx PMOSFETs showed a 2× enhancemsnt in IDsat over Si control PMOSFET and ∼1.5× improvement in effective mobility over universal curve for Si. The corresponding enhancement for surface channel (SC) Ge1-xCx PMOSFETs was 3times; and ∼2.5times;, respectively. The Ion/Ioff ratio for (BC) Ge1-xCx was greater than 5×104. GaAs NMOS capacitors using two different chemical surface treatments NH4OH and (NH4)2S prior to ALD-Al2O3 deposition were examined. Both treatments remove AS2O 3/AS2O6 upon Al2O3 deposition and unpinned the Al2O3/GaAs interface. However (NH4)2S has better frequency dispersion behavior and slightly smaller capacitance equivalent thickness (CET) than NH4OH treatment. Quasi-static CV measurement confirmed formation of a true inversion layer in GaAs.

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Enhanced channel mobility materials for MOSFETs on Si substrates

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