Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, S. C. Wang

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.

    Original languageEnglish (US)
    Article number185301
    JournalNanotechnology
    Volume19
    Issue number18
    DOIs
    StatePublished - May 7 2008

    ASJC Scopus subject areas

    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering
    • Electrical and Electronic Engineering

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