Enhanced light output in InGaN-based light-emitting diodes with omnidirectional one-dimensional photonic crystals

Chung Hsiang Lin, Jui Yen Tsai, Chih Chiang Kao, Hao Chung Kuo, C. C. Yu, J. R. LoJun-Ren, Kok Ming Leung

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We have successfully designed and fabricated GaN-based light-emitting diodes (LEDs) containing an omnidirectional one-dimensional photonic crystal (1D PC). The ID PC is composed of alternatively stacked TiO2 and SiO2 layers designed to possess a photonic band gap (PBG) within the blue regime of interest. With the same multiple quantum well (MQW) emission peak at approximately 450 nm and a driving current of 20 mA, the light output powers of the LED with and without the 1D PC are approximately 11.7 and 6.5 mW, respectively. The enhancement in light extraction of our LED with ID PC demonstrates that a properly designed omnidirectional ID PC can have a higher reflectance and a wider reflection angle than a conventional distributed Bragg reflector (DBR). Our work shows promising potential for the enhancement of output powers of commercial light emitting devices.

    Original languageEnglish (US)
    Pages (from-to)1591-1593
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume45
    Issue number3 A
    DOIs
    StatePublished - Mar 8 2006

    Keywords

    • GaN
    • Light-emitting diode
    • Omnidirectional reflector
    • Photonic crystal

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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