Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography

H. W. Huang, C. H. Lin, K. Y. Lee, C. C. Yu, J. K. Huang, B. D. Lee, H. C. Kuo, K. M. Leung, S. C. Wang

    Research output: Contribution to journalArticle

    Abstract

    GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 νm × 350 νm, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78% when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction.

    Original languageEnglish (US)
    Article number085008
    JournalSemiconductor Science and Technology
    Volume24
    Issue number8
    DOIs
    StatePublished - 2009

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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