Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography

H. W. Huang; C. H. Lin; K. Y. Lee; C. C. Yu; J. K. Huang; B. D. Lee; H. C. Kuo; K. M. Leung; S. C. Wang

doi:10.1088/0268-1242/24/8/085008

Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography

H. W. Huang, C. H. Lin, K. Y. Lee, C. C. Yu, J. K. Huang, B. D. Lee, H. C. Kuo, K. M. Leung, S. C. Wang

Research output: Contribution to journal › Article › peer-review

Abstract

GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 νm × 350 νm, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78% when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction.

Original language	English (US)
Article number	085008
Journal	Semiconductor Science and Technology
Volume	24
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/24/8/085008
State	Published - 2009

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Huang, H. W., Lin, C. H., Lee, K. Y., Yu, C. C., Huang, J. K., Lee, B. D., Kuo, H. C., Leung, K. M., & Wang, S. C. (2009). Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography. Semiconductor Science and Technology, 24(8), Article 085008. https://doi.org/10.1088/0268-1242/24/8/085008

@article{55034138fece44f4b6fdf36ac993c950,

title = "Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography",

abstract = "GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 νm × 350 νm, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78% when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction.",

author = "Huang, {H. W.} and Lin, {C. H.} and Lee, {K. Y.} and Yu, {C. C.} and Huang, {J. K.} and Lee, {B. D.} and Kuo, {H. C.} and Leung, {K. M.} and Wang, {S. C.}",

year = "2009",

doi = "10.1088/0268-1242/24/8/085008",

language = "English (US)",

volume = "24",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "8",

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TY - JOUR

T1 - Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography

AU - Huang, H. W.

AU - Lin, C. H.

AU - Lee, K. Y.

AU - Yu, C. C.

AU - Huang, J. K.

AU - Lee, B. D.

AU - Kuo, H. C.

AU - Leung, K. M.

AU - Wang, S. C.

PY - 2009

Y1 - 2009

N2 - GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 νm × 350 νm, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78% when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction.

AB - GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 νm × 350 νm, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78% when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction.

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DO - 10.1088/0268-1242/24/8/085008

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SN - 0268-1242

VL - 24

JO - Semiconductor Science and Technology

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IS - 8

M1 - 085008

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Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography

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