Enhanced vertical extraction efficiency from a thin-film ingan-gan light-emitting diode using a 2-d photonic crystal and an omnidirectional reflector

C. H. Lin, H. H. Yen, C. F. Lai, H. W. Huang, C. H. Chao, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Leung

    Research output: Contribution to journalArticle

    Abstract

    An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO 2-SiO2 omnidirectional reflector on the bottom was fabricated. The device was investigated b- performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongl- modified b- the PC to have a significantl- narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings.

    Original languageEnglish (US)
    Pages (from-to)836-838
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Volume20
    Issue number10
    DOIs
    StatePublished - May 15 2008

    Keywords

    • Light-emitting diode (LED)
    • Omnidirectional reflector(ODR)
    • Photonic crystal (PC)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

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