Enhanced vertical extraction efficiency from a thin-film ingan-gan light-emitting diode using a 2-d photonic crystal and an omnidirectional reflector

C. H. Lin; H. H. Yen; C. F. Lai; H. W. Huang; C. H. Chao; H. C. Kuo; T. C. Lu; S. C. Wang; K. M. Leung

doi:10.1109/LPT.2008.921118

Enhanced vertical extraction efficiency from a thin-film ingan-gan light-emitting diode using a 2-d photonic crystal and an omnidirectional reflector

C. H. Lin, H. H. Yen, C. F. Lai, H. W. Huang, C. H. Chao, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Leung

Research output: Contribution to journal › Article › peer-review

Abstract

An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO ₂-SiO₂ omnidirectional reflector on the bottom was fabricated. The device was investigated b- performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongl- modified b- the PC to have a significantl- narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings.

Original language	English (US)
Pages (from-to)	836-838
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2008.921118
State	Published - May 15 2008

Keywords

Light-emitting diode (LED)
Omnidirectional reflector(ODR)
Photonic crystal (PC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2008.921118

Cite this

@article{e9c8ab4bb9a7446fa3d4635d1c2ab723,

title = "Enhanced vertical extraction efficiency from a thin-film ingan-gan light-emitting diode using a 2-d photonic crystal and an omnidirectional reflector",

abstract = "An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO 2-SiO2 omnidirectional reflector on the bottom was fabricated. The device was investigated b- performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongl- modified b- the PC to have a significantl- narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings.",

keywords = "Light-emitting diode (LED), Omnidirectional reflector(ODR), Photonic crystal (PC)",

author = "Lin, {C. H.} and Yen, {H. H.} and Lai, {C. F.} and Huang, {H. W.} and Chao, {C. H.} and Kuo, {H. C.} and Lu, {T. C.} and Wang, {S. C.} and Leung, {K. M.}",

note = "Funding Information: Manuscript received December 5, 2007; revised January 23, 2008. This work was supported by the National Science Council of the Republic of China (R.O.C.) in Taiwan under Contract NSC 94-2120-M009-007 and NSC 94-2752-E009-007-PAE.",

year = "2008",

month = may,

day = "15",

doi = "10.1109/LPT.2008.921118",

language = "English (US)",

volume = "20",

pages = "836--838",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Enhanced vertical extraction efficiency from a thin-film ingan-gan light-emitting diode using a 2-d photonic crystal and an omnidirectional reflector

AU - Lin, C. H.

AU - Yen, H. H.

AU - Lai, C. F.

AU - Huang, H. W.

AU - Chao, C. H.

AU - Kuo, H. C.

AU - Lu, T. C.

AU - Wang, S. C.

AU - Leung, K. M.

N1 - Funding Information: Manuscript received December 5, 2007; revised January 23, 2008. This work was supported by the National Science Council of the Republic of China (R.O.C.) in Taiwan under Contract NSC 94-2120-M009-007 and NSC 94-2752-E009-007-PAE.

PY - 2008/5/15

Y1 - 2008/5/15

N2 - An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO 2-SiO2 omnidirectional reflector on the bottom was fabricated. The device was investigated b- performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongl- modified b- the PC to have a significantl- narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings.

AB - An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO 2-SiO2 omnidirectional reflector on the bottom was fabricated. The device was investigated b- performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongl- modified b- the PC to have a significantl- narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings.

KW - Light-emitting diode (LED)

KW - Omnidirectional reflector(ODR)

KW - Photonic crystal (PC)

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U2 - 10.1109/LPT.2008.921118

DO - 10.1109/LPT.2008.921118

M3 - Article

AN - SCOPUS:67650719859

SN - 1041-1135

VL - 20

SP - 836

EP - 838

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

ER -

Enhanced vertical extraction efficiency from a thin-film ingan-gan light-emitting diode using a 2-d photonic crystal and an omnidirectional reflector

Abstract

Keywords

ASJC Scopus subject areas

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