Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector

C. H. Lin; C. F. Lai; T. S. Ko; H. W. Huang; H. C. Kuo; Y. Y. Hung; K. M. Leung; C. C. Yu; R. J. Tsai; C. K. Lee; T. C. Lu; S. C. Wang

doi:10.1109/LPT.2006.883330

Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO₂-SiO₂ multilayer stack omnidirectional reflector

C. H. Lin, C. F. Lai, T. S. Ko, H. W. Huang, H. C. Kuo, Y. Y. Hung, K. M. Leung, C. C. Yu, R. J. Tsai, C. K. Lee, T. C. Lu, S. C. Wang

Research output: Contribution to journal › Article › peer-review

Abstract

Enhancement of light extraction of GaN-based flipchip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO₂ and SiO₂ is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm×1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITOLED with theODRshows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.

Original language	English (US)
Pages (from-to)	2050-2052
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	19
DOIs	https://doi.org/10.1109/LPT.2006.883330
State	Published - Oct 1 2006

Keywords

Flip-chip (FC)
Gan
Indium-tin-oxide (ITO)
Light-emitting diodes (LEDs)
Omnidirectional reflector (ODR)
One-dimensional photonic crystal (1-D PHC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2006.883330

Cite this

Lin, C. H., Lai, C. F., Ko, T. S., Huang, H. W., Kuo, H. C., Hung, Y. Y., Leung, K. M., Yu, C. C., Tsai, R. J., Lee, C. K., Lu, T. C., & Wang, S. C. (2006). Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO₂-SiO₂ multilayer stack omnidirectional reflector. IEEE Photonics Technology Letters, 18(19), 2050-2052. https://doi.org/10.1109/LPT.2006.883330

@article{089335934af8426bb443426e4a5a9311,

title = "Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector",

abstract = "Enhancement of light extraction of GaN-based flipchip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm×1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITOLED with theODRshows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.",

keywords = "Flip-chip (FC), Gan, Indium-tin-oxide (ITO), Light-emitting diodes (LEDs), Omnidirectional reflector (ODR), One-dimensional photonic crystal (1-D PHC)",

author = "Lin, {C. H.} and Lai, {C. F.} and Ko, {T. S.} and Huang, {H. W.} and Kuo, {H. C.} and Hung, {Y. Y.} and Leung, {K. M.} and Yu, {C. C.} and Tsai, {R. J.} and Lee, {C. K.} and Lu, {T. C.} and Wang, {S. C.}",

note = "Funding Information: Manuscript received February 7, 2006; revised July 15, 2006. This work was supported by the National Science Council NSC94-2752-E009-007-PAE, NSC94-2120-M009-007 Republic of China. The work of K. M. Leung was supported in part by the United States Army Research Office under Grant W911NF-04-1-0231.",

year = "2006",

month = oct,

day = "1",

doi = "10.1109/LPT.2006.883330",

language = "English (US)",

volume = "18",

pages = "2050--2052",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "19",

}

TY - JOUR

T1 - Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector

AU - Lin, C. H.

AU - Lai, C. F.

AU - Ko, T. S.

AU - Huang, H. W.

AU - Kuo, H. C.

AU - Hung, Y. Y.

AU - Leung, K. M.

AU - Yu, C. C.

AU - Tsai, R. J.

AU - Lee, C. K.

AU - Lu, T. C.

AU - Wang, S. C.

N1 - Funding Information: Manuscript received February 7, 2006; revised July 15, 2006. This work was supported by the National Science Council NSC94-2752-E009-007-PAE, NSC94-2120-M009-007 Republic of China. The work of K. M. Leung was supported in part by the United States Army Research Office under Grant W911NF-04-1-0231.

PY - 2006/10/1

Y1 - 2006/10/1

N2 - Enhancement of light extraction of GaN-based flipchip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm×1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITOLED with theODRshows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.

AB - Enhancement of light extraction of GaN-based flipchip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm×1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITOLED with theODRshows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.

KW - Flip-chip (FC)

KW - Gan

KW - Indium-tin-oxide (ITO)

KW - Light-emitting diodes (LEDs)

KW - Omnidirectional reflector (ODR)

KW - One-dimensional photonic crystal (1-D PHC)

UR - http://www.scopus.com/inward/record.url?scp=54849417454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54849417454&partnerID=8YFLogxK

U2 - 10.1109/LPT.2006.883330

DO - 10.1109/LPT.2006.883330

M3 - Article

AN - SCOPUS:54849417454

SN - 1041-1135

VL - 18

SP - 2050

EP - 2052

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 19

ER -