Epitaxial growth of ZnO nanowires on a- and c-plane sapphire

Jason B. Baxter, Eray S. Aydil

Research output: Contribution to journalArticlepeer-review


Epitaxial ZnO nanowires were grown on a- and c-plane sapphire substrates by metalorganic chemical vapor deposition without metal catalysts or templates. Nanowires with monodisperse diameters grow in dense arrays perpendicular to a-plane sapphire and with in-plane rotational alignment due to [0 0 0 1] ZnO∥[1 1 2̄ 0]sapphire, [1 1 2̄ 0] ZnO[0 0 0 1]sapphire epitaxy. On c-plane sapphire, multiple possible epitaxial relations give a mixture of nanowire orientations. The majority of the nanowires grow in one of the three directions all at an angle of 51.8° off the substrate plane with [0 0 0 1]ZnO∥[1 0 1̄ 4]sapphire, [1 0 1̄ 0]ZnO∥[1 2̄ 1 0]sapphire epitaxy. A small fraction of the nanowires grow perpendicular to the substrate with [0 0 0 1]ZnO∥[0 0 0 1] sapphire.

Original languageEnglish (US)
Pages (from-to)407-411
Number of pages5
JournalJournal of Crystal Growth
Issue number3-4
StatePublished - Feb 1 2005


  • A1. Substrates
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nanomaterials
  • B1. Sapphire
  • B1. Zinc compounds
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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