Abstract
The etching mechanism of deep (∼10 μm) submicron diameter holes with high aspect ratios (>10) using plasmas maintained in mixtures of SF 6 and O 2 gases was investigated. A low-pressure, high-density, inductively coupled plasma etching reactor with a planar coil was used for the etching. The influence of SF 6-to-O 2 gas ratio, pressure, and rf-bias voltage on the etch rate and selectivity was also analyzed using Si wafers, which were patterned with 0.35-0.5 μm diameter holes in a SiO 2 mask. The etch rate and anisotropy were determined using the F-to-ion flux ratio and F-to-O flux ratio.
Original language | English (US) |
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Pages (from-to) | 606-615 |
Number of pages | 10 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 22 |
Issue number | 3 |
DOIs | |
State | Published - May 2004 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films