Etching of high aspect ratio structures in Si using SF 6/O 2 plasma

Sergi Gomez, Rodolfo Jim Belen, Mark Kiehlbauch, Eray S. Aydil

Research output: Contribution to journalArticlepeer-review


The etching mechanism of deep (∼10 μm) submicron diameter holes with high aspect ratios (>10) using plasmas maintained in mixtures of SF 6 and O 2 gases was investigated. A low-pressure, high-density, inductively coupled plasma etching reactor with a planar coil was used for the etching. The influence of SF 6-to-O 2 gas ratio, pressure, and rf-bias voltage on the etch rate and selectivity was also analyzed using Si wafers, which were patterned with 0.35-0.5 μm diameter holes in a SiO 2 mask. The etch rate and anisotropy were determined using the F-to-ion flux ratio and F-to-O flux ratio.

Original languageEnglish (US)
Pages (from-to)606-615
Number of pages10
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - May 2004

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Etching of high aspect ratio structures in Si using SF 6/O 2 plasma'. Together they form a unique fingerprint.

Cite this