Abstract
Tunneling from a metal into degenerate p-type silicon exhibits peaks in d2idV2 at biases eV=±ω0, where ω0 is the k=0 optical-phonon energy of the semiconductor. It is suggested that these peaks reflect modifications in the bulk semiconductor states at energies ω0 above and below the Fermi energy arising from hole-optical-phonon interaction. An additional peak near the optical-phonon frequency, but well resolved from it, is identified with vibrations of the boron acceptor impurity.
Original language | English (US) |
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Pages (from-to) | 204-207 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 20 |
Issue number | 5 |
DOIs | |
State | Published - 1968 |
ASJC Scopus subject areas
- Physics and Astronomy(all)