Explanation of nMOSFET substrate current after hard gate oxide breakdown

B. Kaczer; R. Degraeve; A. De Keersgieter; M. Rasras; G. Groeseneken

doi:10.1016/S0167-9317(01)00659-1

Explanation of nMOSFET substrate current after hard gate oxide breakdown

B. Kaczer, R. Degraeve, A. De Keersgieter, M. Rasras, G. Groeseneken

Research output: Contribution to journal › Conference article › peer-review

Abstract

The origin of the substrate current in nMOSFET after hard gate oxide breakdown is studied as a function of the breakdown position. The breakdown path is modeled by a narrow (∼5 nm diameter) inclusion of highly doped n-type silicon in SiO₂. Device simulations excellently reproduce all post-breakdown nMOSFET characteristics, including the substrate current behavior, for both gate-to-substrate and gate-to-extension breakdowns. The model also identifies the origin of impact ionization and recombination observed in emission spectra.

Original language	English (US)
Pages (from-to)	155-160
Number of pages	6
Journal	Microelectronic Engineering
Volume	59
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(01)00659-1
State	Published - Nov 2001
Event	12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy Duration: Jun 20 2001 → Jun 23 2001

Keywords

Bipolar transistor
Device simulation
Gate oxide breakdown
Hot electron effects
Impact ionization
MOSFET
Recombination
Substrate current

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/S0167-9317(01)00659-1

Cite this

@article{ac3c439e35364e30ae2b44642f56b512,

title = "Explanation of nMOSFET substrate current after hard gate oxide breakdown",

abstract = "The origin of the substrate current in nMOSFET after hard gate oxide breakdown is studied as a function of the breakdown position. The breakdown path is modeled by a narrow (∼5 nm diameter) inclusion of highly doped n-type silicon in SiO2. Device simulations excellently reproduce all post-breakdown nMOSFET characteristics, including the substrate current behavior, for both gate-to-substrate and gate-to-extension breakdowns. The model also identifies the origin of impact ionization and recombination observed in emission spectra.",

keywords = "Bipolar transistor, Device simulation, Gate oxide breakdown, Hot electron effects, Impact ionization, MOSFET, Recombination, Substrate current",

author = "B. Kaczer and R. Degraeve and {De Keersgieter}, A. and M. Rasras and G. Groeseneken",

note = "Funding Information: The authors wish to thank T. Bearda, J. Schmitz, W. Schoenmaker, and E. Cartier for useful discussions. This work was partially funded by the European Union under the IST HUNT Project. Copyright: Copyright 2007 Elsevier B.V., All rights reserved.; 12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) ; Conference date: 20-06-2001 Through 23-06-2001",

year = "2001",

month = nov,

doi = "10.1016/S0167-9317(01)00659-1",

language = "English (US)",

volume = "59",

pages = "155--160",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Explanation of nMOSFET substrate current after hard gate oxide breakdown

AU - Kaczer, B.

AU - Degraeve, R.

AU - De Keersgieter, A.

AU - Rasras, M.

AU - Groeseneken, G.

N1 - Funding Information: The authors wish to thank T. Bearda, J. Schmitz, W. Schoenmaker, and E. Cartier for useful discussions. This work was partially funded by the European Union under the IST HUNT Project. Copyright: Copyright 2007 Elsevier B.V., All rights reserved.

PY - 2001/11

Y1 - 2001/11

N2 - The origin of the substrate current in nMOSFET after hard gate oxide breakdown is studied as a function of the breakdown position. The breakdown path is modeled by a narrow (∼5 nm diameter) inclusion of highly doped n-type silicon in SiO2. Device simulations excellently reproduce all post-breakdown nMOSFET characteristics, including the substrate current behavior, for both gate-to-substrate and gate-to-extension breakdowns. The model also identifies the origin of impact ionization and recombination observed in emission spectra.

AB - The origin of the substrate current in nMOSFET after hard gate oxide breakdown is studied as a function of the breakdown position. The breakdown path is modeled by a narrow (∼5 nm diameter) inclusion of highly doped n-type silicon in SiO2. Device simulations excellently reproduce all post-breakdown nMOSFET characteristics, including the substrate current behavior, for both gate-to-substrate and gate-to-extension breakdowns. The model also identifies the origin of impact ionization and recombination observed in emission spectra.

KW - Bipolar transistor

KW - Device simulation

KW - Gate oxide breakdown

KW - Hot electron effects

KW - Impact ionization

KW - MOSFET

KW - Recombination

KW - Substrate current

UR - http://www.scopus.com/inward/record.url?scp=0035498582&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035498582&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(01)00659-1

DO - 10.1016/S0167-9317(01)00659-1

M3 - Conference article

AN - SCOPUS:0035498582

SN - 0167-9317

VL - 59

SP - 155

EP - 160

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

T2 - 12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001)

Y2 - 20 June 2001 through 23 June 2001

ER -

Explanation of nMOSFET substrate current after hard gate oxide breakdown

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this