Explanation of nMOSFET substrate current after hard gate oxide breakdown

B. Kaczer, R. Degraeve, A. De Keersgieter, M. Rasras, G. Groeseneken

Research output: Contribution to journalConference article

Abstract

The origin of the substrate current in nMOSFET after hard gate oxide breakdown is studied as a function of the breakdown position. The breakdown path is modeled by a narrow (∼5 nm diameter) inclusion of highly doped n-type silicon in SiO2. Device simulations excellently reproduce all post-breakdown nMOSFET characteristics, including the substrate current behavior, for both gate-to-substrate and gate-to-extension breakdowns. The model also identifies the origin of impact ionization and recombination observed in emission spectra.

Original languageEnglish (US)
Pages (from-to)155-160
Number of pages6
JournalMicroelectronic Engineering
Volume59
Issue number1-4
DOIs
StatePublished - Nov 2001
Event12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy
Duration: Jun 20 2001Jun 23 2001

Keywords

  • Bipolar transistor
  • Device simulation
  • Gate oxide breakdown
  • Hot electron effects
  • Impact ionization
  • MOSFET
  • Recombination
  • Substrate current

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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