Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors

C. H. Chiu; H. C. Kuo; C. E. Lee; C. H. Lin; P. C. Cheng; H. W. Huang; T. C. Lu; S. C. Wang; K. M. Leung

doi:10.1088/0268-1242/22/7/029

Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO₂/SiO₂ omnidirectional reflectors

C. H. Chiu, H. C. Kuo, C. E. Lee, C. H. Lin, P. C. Cheng, H. W. Huang, T. C. Lu, S. C. Wang, K. M. Leung

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, a novel GaN-based thin-film vertical injection light-emitting diode (LED) structure with a TiO₂ and SiO₂ omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. The designed ODR, consisting of alternating TiO₂ and SiO₂, layers possesses a complete photonic band gap within the blue region of interest. The arrays of the conducting channels are integrated into the TiO₂/SiO₂ ODR structure for vertically spreading the current. Assisted by the laser lift-off and photo-enhanced chemically etched surface roughening process, the light output power and the external quantum efficiency of our thin-film LED with a TiO₂/SiO₂ ODR (at a driving current of 350 mA and with chip size of 1 mm × 1 mm) reached 330 mW and 26.7%, increased by 18% and 16%, respectively, compared with the results from the thin-film LED with an Al mirror. By examining the radiation patterns of the LEDs, the optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO₂/SiO₂ ODR within the blue regime.

Original language	English (US)
Article number	029
Pages (from-to)	831-835
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	22
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/22/7/029
State	Published - Jul 1 2007

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/22/7/029

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@article{8374029518ac4138b1343fd717220742,

title = "Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors",

abstract = "In this paper, a novel GaN-based thin-film vertical injection light-emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. The designed ODR, consisting of alternating TiO2 and SiO2, layers possesses a complete photonic band gap within the blue region of interest. The arrays of the conducting channels are integrated into the TiO2/SiO2 ODR structure for vertically spreading the current. Assisted by the laser lift-off and photo-enhanced chemically etched surface roughening process, the light output power and the external quantum efficiency of our thin-film LED with a TiO2/SiO2 ODR (at a driving current of 350 mA and with chip size of 1 mm × 1 mm) reached 330 mW and 26.7%, increased by 18% and 16%, respectively, compared with the results from the thin-film LED with an Al mirror. By examining the radiation patterns of the LEDs, the optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.",

author = "Chiu, {C. H.} and Kuo, {H. C.} and Lee, {C. E.} and Lin, {C. H.} and Cheng, {P. C.} and Huang, {H. W.} and Lu, {T. C.} and Wang, {S. C.} and Leung, {K. M.}",

year = "2007",

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doi = "10.1088/0268-1242/22/7/029",

language = "English (US)",

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TY - JOUR

T1 - Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors

AU - Chiu, C. H.

AU - Kuo, H. C.

AU - Lee, C. E.

AU - Lin, C. H.

AU - Cheng, P. C.

AU - Huang, H. W.

AU - Lu, T. C.

AU - Wang, S. C.

AU - Leung, K. M.

PY - 2007/7/1

Y1 - 2007/7/1

N2 - In this paper, a novel GaN-based thin-film vertical injection light-emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. The designed ODR, consisting of alternating TiO2 and SiO2, layers possesses a complete photonic band gap within the blue region of interest. The arrays of the conducting channels are integrated into the TiO2/SiO2 ODR structure for vertically spreading the current. Assisted by the laser lift-off and photo-enhanced chemically etched surface roughening process, the light output power and the external quantum efficiency of our thin-film LED with a TiO2/SiO2 ODR (at a driving current of 350 mA and with chip size of 1 mm × 1 mm) reached 330 mW and 26.7%, increased by 18% and 16%, respectively, compared with the results from the thin-film LED with an Al mirror. By examining the radiation patterns of the LEDs, the optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.

AB - In this paper, a novel GaN-based thin-film vertical injection light-emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. The designed ODR, consisting of alternating TiO2 and SiO2, layers possesses a complete photonic band gap within the blue region of interest. The arrays of the conducting channels are integrated into the TiO2/SiO2 ODR structure for vertically spreading the current. Assisted by the laser lift-off and photo-enhanced chemically etched surface roughening process, the light output power and the external quantum efficiency of our thin-film LED with a TiO2/SiO2 ODR (at a driving current of 350 mA and with chip size of 1 mm × 1 mm) reached 330 mW and 26.7%, increased by 18% and 16%, respectively, compared with the results from the thin-film LED with an Al mirror. By examining the radiation patterns of the LEDs, the optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.

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Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO₂/SiO₂ omnidirectional reflectors

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