Fabrication and characterization of Fe81Ga19 thin films

J. L. Weston; A. Butera; T. Lograsso; M. Shamsuzzoha; I. Zana; G. Zangari; J. Barnard

doi:10.1109/TMAG.2002.802468

Fabrication and characterization of Fe₈₁Ga₁₉ thin films

J. L. Weston, A. Butera, T. Lograsso, M. Shamsuzzoha, I. Zana, G. Zangari, J. Barnard

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Abstract

In order to incorporate magnetostrictive actuators into microelectromechanical systems devices, thin film maguetoelastic materials must have both a high magnetostriction and a low saturation field. This work focuses on the fabrication and characterization of (110) oriented epitaxial FeGa thin films grown epitaxially on Cu on Si. The material in the bulk exhibits a large magnetostriction and in thin film form is here shown to be easily saturated in all in-plane orientations in fields under 500 Oe. Thin (less than 160 nm) FeGa films grow according to a single (110) variant on Cu(100)/Si(100). On the contrary, thick (160 nm) films exhibit multiple (110) variants.

Original language	English (US)
Pages (from-to)	2832-2834
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	38
Issue number	5
DOIs	https://doi.org/10.1109/TMAG.2002.802468
State	Published - Sep 2002

Keywords

Epitaxy
Magnetoelastic materials
Microelectromechanical systems (MEMS)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2002.802468

Cite this

@article{bd4a045d01524ef69a7f31f8e97d1edc,

title = "Fabrication and characterization of Fe81Ga19 thin films",

abstract = "In order to incorporate magnetostrictive actuators into microelectromechanical systems devices, thin film maguetoelastic materials must have both a high magnetostriction and a low saturation field. This work focuses on the fabrication and characterization of (110) oriented epitaxial FeGa thin films grown epitaxially on Cu on Si. The material in the bulk exhibits a large magnetostriction and in thin film form is here shown to be easily saturated in all in-plane orientations in fields under 500 Oe. Thin (less than 160 nm) FeGa films grow according to a single (110) variant on Cu(100)/Si(100). On the contrary, thick (160 nm) films exhibit multiple (110) variants.",

keywords = "Epitaxy, Magnetoelastic materials, Microelectromechanical systems (MEMS)",

author = "Weston, {J. L.} and A. Butera and T. Lograsso and M. Shamsuzzoha and I. Zana and G. Zangari and J. Barnard",

note = "Funding Information: Manuscript received February 19, 2002; revised May 24, 2002. This work was supported by the National Science Foundation under Grant NSF-DMR-9713497 and made use of MRSEC shared facilities supported by NSF-DMR-9809423. The authors are with the MINT Center, The University of Alabama, Tuscaloosa, AL 35487-0209 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/TMAG.2002.802468.",

year = "2002",

month = sep,

doi = "10.1109/TMAG.2002.802468",

language = "English (US)",

volume = "38",

pages = "2832--2834",

journal = "IEEE Transactions on Magnetics",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Fabrication and characterization of Fe81Ga19 thin films

AU - Weston, J. L.

AU - Butera, A.

AU - Lograsso, T.

AU - Shamsuzzoha, M.

AU - Zana, I.

AU - Zangari, G.

AU - Barnard, J.

N1 - Funding Information: Manuscript received February 19, 2002; revised May 24, 2002. This work was supported by the National Science Foundation under Grant NSF-DMR-9713497 and made use of MRSEC shared facilities supported by NSF-DMR-9809423. The authors are with the MINT Center, The University of Alabama, Tuscaloosa, AL 35487-0209 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/TMAG.2002.802468.

PY - 2002/9

Y1 - 2002/9

N2 - In order to incorporate magnetostrictive actuators into microelectromechanical systems devices, thin film maguetoelastic materials must have both a high magnetostriction and a low saturation field. This work focuses on the fabrication and characterization of (110) oriented epitaxial FeGa thin films grown epitaxially on Cu on Si. The material in the bulk exhibits a large magnetostriction and in thin film form is here shown to be easily saturated in all in-plane orientations in fields under 500 Oe. Thin (less than 160 nm) FeGa films grow according to a single (110) variant on Cu(100)/Si(100). On the contrary, thick (160 nm) films exhibit multiple (110) variants.

AB - In order to incorporate magnetostrictive actuators into microelectromechanical systems devices, thin film maguetoelastic materials must have both a high magnetostriction and a low saturation field. This work focuses on the fabrication and characterization of (110) oriented epitaxial FeGa thin films grown epitaxially on Cu on Si. The material in the bulk exhibits a large magnetostriction and in thin film form is here shown to be easily saturated in all in-plane orientations in fields under 500 Oe. Thin (less than 160 nm) FeGa films grow according to a single (110) variant on Cu(100)/Si(100). On the contrary, thick (160 nm) films exhibit multiple (110) variants.

KW - Epitaxy

KW - Magnetoelastic materials

KW - Microelectromechanical systems (MEMS)

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