Fabrication of Ni nanocrystal flash memories using a polymeric self-assembly approach

Davood Shahrjerdi, Domingo I. Garcia-Gutierrez, Sanjay K. Banerjee

Research output: Contribution to journalArticlepeer-review

Abstract

Fabrication of nickel nanocrystal flash memories using a polymeric approach is presented. Heat treatment of the poly (styrene-b-methyl methacrylate) block copolymer with a molecular weight of 67 000 g/mol followed by PMMA removal in an organic solvent created a porous PS film with 20-nm-diameter pores and a total pore density of ∼6 times 1010 cm-2. A trilayer pattern-transfer approach was employed in order to solve the metal lift-off issue intertwined with the low aspect ratio block copolymer patterns. As a result, a highly uniform self- assembled array of nickel nanocrystals was attained and utilized for flash memory fabrication. The memory devices demonstrated an unchanged memory window for up to 2 times 105 stressing cycles.

Original languageEnglish (US)
Pages (from-to)793-796
Number of pages4
JournalIEEE Electron Device Letters
Volume28
Issue number9
DOIs
StatePublished - 2007

Keywords

  • Diblock copolymer
  • Nanocrystals
  • Nonvolatile memory
  • Self-assembly

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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