Abstract
Fabrication of nickel nanocrystal flash memories using a polymeric approach is presented. Heat treatment of the poly (styrene-b-methyl methacrylate) block copolymer with a molecular weight of 67 000 g/mol followed by PMMA removal in an organic solvent created a porous PS film with 20-nm-diameter pores and a total pore density of ∼6 times 1010 cm-2. A trilayer pattern-transfer approach was employed in order to solve the metal lift-off issue intertwined with the low aspect ratio block copolymer patterns. As a result, a highly uniform self- assembled array of nickel nanocrystals was attained and utilized for flash memory fabrication. The memory devices demonstrated an unchanged memory window for up to 2 times 105 stressing cycles.
Original language | English (US) |
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Pages (from-to) | 793-796 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 28 |
Issue number | 9 |
DOIs | |
State | Published - 2007 |
Keywords
- Diblock copolymer
- Nanocrystals
- Nonvolatile memory
- Self-assembly
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering