Abstract
Fabrication of Ge-based thermocouple on polyethylene-terephthalate (PET) plastic substrates is reported. The amorphous Ge film, deposited using electron beam evaporation, is post treated to form a polycrystalline film. The annealing process has been performed at temperatures ranging from 120°C to 175°C and study of physical characteristics of Ge films using XRD and SEM confirms its crystallinity. A value of 100 μV/°C is extracted for the Ge-Al junctions. The thermocouple fabrication and its response to flow are reported. A novel approach is described to perform the micromachining of PET substrates for the formation of craters and membranes. Di-methyl-formamide (DMF) is used as the solvent of the PET substrate, masked with a Ge/Cu multilayer. An average chemical etch rate of 12 μm/h is achieved in the presence of 6.5 m W/cm 2 of 360-nm UV at ambient temperature.
Original language | English (US) |
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Pages (from-to) | 743-748 |
Number of pages | 6 |
Journal | IEEE Sensors Journal |
Volume | 4 |
Issue number | 6 |
DOIs | |
State | Published - Dec 2004 |
Keywords
- Flexible substrates
- Ge thermocouples
- Micromachining
- Polyethylene-terephthalate (PET) etching
- Ultraviolet illumination
ASJC Scopus subject areas
- Instrumentation
- Electrical and Electronic Engineering