Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack

Davood Shahrjerdi, Thomas Rotter, Ganish Balakrishnan, Diana Huffaker, Emanuel Tutuc, Sanjay K. Banerjee

Research output: Contribution to journalArticle

Abstract

In this letter, we report the fabrication and characterization of self-aligned inversion-type enhancement-mode In0.53 Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs). The In0.53Ga0.47As surface was passivated by atomic layer deposition of a 2.5-nm-thick AlN interfacial layer. In0.53Ga0.47As MOS capacitors showed an excellent frequency dispersion behavior. A maximum drive current of 18.5 μ Aμm was obtained at a gate overdrive of 2 V for a MOSFET device with a gate length of 20 μm. An ION/IOFF ratio of 104, a positive threshold voltage of 0.15 V, and a subthreshold slope of ∼165 mV/dec were extracted from the transfer characteristics. The interface-trap density is estimated to be ∼7-8 × 1012 cm-2 · eV-1 from the subthreshold characteristics of the MOSFET.

Original languageEnglish (US)
Pages (from-to)557-560
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number6
DOIs
StatePublished - Jun 2008

Keywords

  • Atomic layer deposition (ALD)
  • Enhancement mode
  • MOSFETs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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