Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack

Davood Shahrjerdi; Thomas Rotter; Ganish Balakrishnan; Diana Huffaker; Emanuel Tutuc; Sanjay K. Banerjee

doi:10.1109/LED.2008.922031

Fabrication of self-aligned enhancement-mode In_0.53 Ga_0.47As MOSFETs with TaN/HfO₂/AlN gate stack

Davood Shahrjerdi, Thomas Rotter, Ganish Balakrishnan, Diana Huffaker, Emanuel Tutuc, Sanjay K. Banerjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, we report the fabrication and characterization of self-aligned inversion-type enhancement-mode In_0.53 Ga_0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs). The In_0.53Ga_0.47As surface was passivated by atomic layer deposition of a 2.5-nm-thick AlN interfacial layer. In_0.53Ga_0.47As MOS capacitors showed an excellent frequency dispersion behavior. A maximum drive current of 18.5 μ Aμm was obtained at a gate overdrive of 2 V for a MOSFET device with a gate length of 20 μm. An I_ON/I_OFF ratio of 10⁴, a positive threshold voltage of 0.15 V, and a subthreshold slope of ∼165 mV/dec were extracted from the transfer characteristics. The interface-trap density is estimated to be ∼7-8 × 10¹² cm^-2 · eV^-1 from the subthreshold characteristics of the MOSFET.

Original language	English (US)
Pages (from-to)	557-560
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	6
DOIs	https://doi.org/10.1109/LED.2008.922031
State	Published - Jun 2008

Keywords

Atomic layer deposition (ALD)
Enhancement mode
MOSFETs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2008.922031

Cite this

@article{247585ccc1f444988017aa8beb3c5700,

title = "Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack",

abstract = "In this letter, we report the fabrication and characterization of self-aligned inversion-type enhancement-mode In0.53 Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs). The In0.53Ga0.47As surface was passivated by atomic layer deposition of a 2.5-nm-thick AlN interfacial layer. In0.53Ga0.47As MOS capacitors showed an excellent frequency dispersion behavior. A maximum drive current of 18.5 μ Aμm was obtained at a gate overdrive of 2 V for a MOSFET device with a gate length of 20 μm. An ION/IOFF ratio of 104, a positive threshold voltage of 0.15 V, and a subthreshold slope of ∼165 mV/dec were extracted from the transfer characteristics. The interface-trap density is estimated to be ∼7-8 × 1012 cm-2 · eV-1 from the subthreshold characteristics of the MOSFET.",

keywords = "Atomic layer deposition (ALD), Enhancement mode, MOSFETs",

author = "Davood Shahrjerdi and Thomas Rotter and Ganish Balakrishnan and Diana Huffaker and Emanuel Tutuc and Banerjee, {Sanjay K.}",

note = "Funding Information: Manuscript received February 15, 2008; revised March 19, 2008. This work was supported in part by DARPA and in part by the Micron Foundation. The review of this letter was arranged by Editor Y. Taur.",

year = "2008",

month = jun,

doi = "10.1109/LED.2008.922031",

language = "English (US)",

volume = "29",

pages = "557--560",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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T1 - Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack

AU - Shahrjerdi, Davood

AU - Rotter, Thomas

AU - Balakrishnan, Ganish

AU - Huffaker, Diana

AU - Tutuc, Emanuel

AU - Banerjee, Sanjay K.

N1 - Funding Information: Manuscript received February 15, 2008; revised March 19, 2008. This work was supported in part by DARPA and in part by the Micron Foundation. The review of this letter was arranged by Editor Y. Taur.

PY - 2008/6

Y1 - 2008/6

N2 - In this letter, we report the fabrication and characterization of self-aligned inversion-type enhancement-mode In0.53 Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs). The In0.53Ga0.47As surface was passivated by atomic layer deposition of a 2.5-nm-thick AlN interfacial layer. In0.53Ga0.47As MOS capacitors showed an excellent frequency dispersion behavior. A maximum drive current of 18.5 μ Aμm was obtained at a gate overdrive of 2 V for a MOSFET device with a gate length of 20 μm. An ION/IOFF ratio of 104, a positive threshold voltage of 0.15 V, and a subthreshold slope of ∼165 mV/dec were extracted from the transfer characteristics. The interface-trap density is estimated to be ∼7-8 × 1012 cm-2 · eV-1 from the subthreshold characteristics of the MOSFET.

AB - In this letter, we report the fabrication and characterization of self-aligned inversion-type enhancement-mode In0.53 Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs). The In0.53Ga0.47As surface was passivated by atomic layer deposition of a 2.5-nm-thick AlN interfacial layer. In0.53Ga0.47As MOS capacitors showed an excellent frequency dispersion behavior. A maximum drive current of 18.5 μ Aμm was obtained at a gate overdrive of 2 V for a MOSFET device with a gate length of 20 μm. An ION/IOFF ratio of 104, a positive threshold voltage of 0.15 V, and a subthreshold slope of ∼165 mV/dec were extracted from the transfer characteristics. The interface-trap density is estimated to be ∼7-8 × 1012 cm-2 · eV-1 from the subthreshold characteristics of the MOSFET.

KW - Atomic layer deposition (ALD)

KW - Enhancement mode

KW - MOSFETs

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