Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric

Michael E. Ramón, Tarik Akyol, Davood Shahrjerdi, Chadwin D. Young, Julian Cheng, Leonard F. Register, Sanjay K. Banerjee

Research output: Contribution to journalArticle

Abstract

We report measurement of fast transient charging effects (FTCE) in enhancement-mode n-channel GaAs, InP, and In0.53Ga0.47As field-effect transistors (FETs) using Al2O3 as the gate dielectric. The FTCE data reveal superior drive current and enhanced threshold voltage stability for In0.53Ga0.47As FETs. We further report charge pumping measurements for In0.53Ga0.47As transistors, revealing that the majority of interface traps are donor traps, as well as an increased trap density within the Al2O3 bulk. Such data, together with FTCE data, reveal that drain current degradation observed during pulsed I-V measurements is predominantly due to slow oxide traps, underscoring their significance within III-V/high-κ metal-oxide-semiconductor FETs.

Original languageEnglish (US)
Article number022104
JournalApplied Physics Letters
Volume102
Issue number2
DOIs
StatePublished - Jan 14 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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