Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy

Robert L. Kosut, Russel Caflisch, Mark Gyure, David G. Meyer, Andrew Engelmann

Research output: Contribution to journalConference article

Abstract

This paper addresses the modeling and control of epitaxial growth of III-V semiconductor material by Molecular Beam Epitaxy. To reliably achieve the required features, processing must use fundamental understanding of the atom-by-atom assembly of these structures and careful feedback design. One problem is to develop a model relating morphology, sensor variables, and control variables. Another is to design robust feedback for achieving a desired surface morphology. A novel new model is developed and presented here as well as modifications to a previously published model. Feedback design using both models is conducted; simulation results are shown.

Original languageEnglish (US)
Pages (from-to)4204-4209
Number of pages6
JournalProceedings of the IEEE Conference on Decision and Control
Volume4
StatePublished - 1999
EventThe 38th IEEE Conference on Decision and Control (CDC) - Phoenix, AZ, USA
Duration: Dec 7 1999Dec 10 1999

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Modeling and Simulation
  • Control and Optimization

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