Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy

Robert L. Kosut; Russel Caflisch; Mark Gyure; David G. Meyer; Andrew Engelmann

Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy

Robert L. Kosut, Russel Caflisch, Mark Gyure, David G. Meyer, Andrew Engelmann

Mathematics

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper addresses the modeling and control of epitaxial growth of III-V semiconductor material by Molecular Beam Epitaxy. To reliably achieve the required features, processing must use fundamental understanding of the atom-by-atom assembly of these structures and careful feedback design. One problem is to develop a model relating morphology, sensor variables, and control variables. Another is to design robust feedback for achieving a desired surface morphology. A novel new model is developed and presented here as well as modifications to a previously published model. Feedback design using both models is conducted; simulation results are shown.

Original language	English (US)
Pages (from-to)	4204-4209
Number of pages	6
Journal	Proceedings of the IEEE Conference on Decision and Control
Volume	4
State	Published - 1999
Event	The 38th IEEE Conference on Decision and Control (CDC) - Phoenix, AZ, USA Duration: Dec 7 1999 → Dec 10 1999

ASJC Scopus subject areas

Control and Systems Engineering
Modeling and Simulation
Control and Optimization

Cite this

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title = "Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy",

abstract = "This paper addresses the modeling and control of epitaxial growth of III-V semiconductor material by Molecular Beam Epitaxy. To reliably achieve the required features, processing must use fundamental understanding of the atom-by-atom assembly of these structures and careful feedback design. One problem is to develop a model relating morphology, sensor variables, and control variables. Another is to design robust feedback for achieving a desired surface morphology. A novel new model is developed and presented here as well as modifications to a previously published model. Feedback design using both models is conducted; simulation results are shown.",

author = "Kosut, {Robert L.} and Russel Caflisch and Mark Gyure and Meyer, {David G.} and Andrew Engelmann",

year = "1999",

language = "English (US)",

volume = "4",

pages = "4204--4209",

journal = "Proceedings of the IEEE Conference on Decision and Control",

issn = "0191-2216",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "The 38th IEEE Conference on Decision and Control (CDC) ; Conference date: 07-12-1999 Through 10-12-1999",

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T1 - Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy

AU - Kosut, Robert L.

AU - Caflisch, Russel

AU - Gyure, Mark

AU - Meyer, David G.

AU - Engelmann, Andrew

PY - 1999

Y1 - 1999

N2 - This paper addresses the modeling and control of epitaxial growth of III-V semiconductor material by Molecular Beam Epitaxy. To reliably achieve the required features, processing must use fundamental understanding of the atom-by-atom assembly of these structures and careful feedback design. One problem is to develop a model relating morphology, sensor variables, and control variables. Another is to design robust feedback for achieving a desired surface morphology. A novel new model is developed and presented here as well as modifications to a previously published model. Feedback design using both models is conducted; simulation results are shown.

AB - This paper addresses the modeling and control of epitaxial growth of III-V semiconductor material by Molecular Beam Epitaxy. To reliably achieve the required features, processing must use fundamental understanding of the atom-by-atom assembly of these structures and careful feedback design. One problem is to develop a model relating morphology, sensor variables, and control variables. Another is to design robust feedback for achieving a desired surface morphology. A novel new model is developed and presented here as well as modifications to a previously published model. Feedback design using both models is conducted; simulation results are shown.

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M3 - Conference article

AN - SCOPUS:0033325164

SN - 0191-2216

VL - 4

SP - 4204

EP - 4209

JO - Proceedings of the IEEE Conference on Decision and Control

JF - Proceedings of the IEEE Conference on Decision and Control

T2 - The 38th IEEE Conference on Decision and Control (CDC)

Y2 - 7 December 1999 through 10 December 1999

ER -

Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

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