TY - JOUR
T1 - FerroCoin
T2 - Ferroelectric Tunnel Junction-Based True Random Number Generator
AU - Chatterjee, Swetaki
AU - Rangarajan, Nikhil
AU - Patnaik, Satwik
AU - Rajasekharan, Dinesh
AU - Sinanoglu, Ozgur
AU - Chauhan, Yogesh Singh
N1 - Funding Information:
This work was supported by the Swarnajayanti Fellowship of the Department of Science and Technology, India under Grant DST/SJF/ETA-02/2017-18.
Publisher Copyright:
© 2013 IEEE.
PY - 2023/4/1
Y1 - 2023/4/1
N2 - In this paper, we propose a Ferroelectric Tunnel Junction (FTJ)-based true random number generator (TRNG) that utilizes the stochastic domain switching phenomenon in ferroelectric materials. Ferroelectrics are promising for extracting randomness owing to their innate switching entropy in the multi-domain state. The random numbers generated by the proposed TRNG are shown to pass all the NIST SP 800-22 tests. The robustness of the proposed TRNG is also validated at various temperature and process corners. Important metrics such as power, bit rate, and energy/bit are calculated. This is the first comprehensive work demonstrating a ferroelectric-based TRNG with all these metrics. Compared to state-of-the-art TRNGs using other emerging technologies, we can achieve a higher bit rate with lower power consumption. We also perform material-level optimization with different ferroelectric materials, and showcase the trade-off between the bit rate and the power consumption. The proposed TRNG shows high robustness and reliability, and thus has the potential for implementing a low power on-chip solution.
AB - In this paper, we propose a Ferroelectric Tunnel Junction (FTJ)-based true random number generator (TRNG) that utilizes the stochastic domain switching phenomenon in ferroelectric materials. Ferroelectrics are promising for extracting randomness owing to their innate switching entropy in the multi-domain state. The random numbers generated by the proposed TRNG are shown to pass all the NIST SP 800-22 tests. The robustness of the proposed TRNG is also validated at various temperature and process corners. Important metrics such as power, bit rate, and energy/bit are calculated. This is the first comprehensive work demonstrating a ferroelectric-based TRNG with all these metrics. Compared to state-of-the-art TRNGs using other emerging technologies, we can achieve a higher bit rate with lower power consumption. We also perform material-level optimization with different ferroelectric materials, and showcase the trade-off between the bit rate and the power consumption. The proposed TRNG shows high robustness and reliability, and thus has the potential for implementing a low power on-chip solution.
KW - Domain switching
KW - ferroelectric tunnel junction
KW - hardware security
KW - stochasticity
KW - true random number generator
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U2 - 10.1109/TETC.2022.3210401
DO - 10.1109/TETC.2022.3210401
M3 - Article
AN - SCOPUS:85139846927
SN - 2168-6750
VL - 11
SP - 541
EP - 547
JO - IEEE Transactions on Emerging Topics in Computing
JF - IEEE Transactions on Emerging Topics in Computing
IS - 2
ER -