Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks

Saurabh J. Ullal, Harmeet Singh, John Daugherty, Vahid Vahedi, Eray S. Aydil

Research output: Contribution to journalArticle

Abstract

A study was conducted on the chemical nature of the composite films depositing on the reactor walls during STI etching using plasma and surface diagnostics. However, the composite film can be removed by using an O2 plasma maintained under conditions where the gas residence time was sufficiently high. In this case, the removal of the composite film proceeds by etching of the fluorocarbon film by O in the O2 plasma, and subsequent etching of the halogenated silicon oxide component of the film by F produced by electron impact dissociation of the fluorocarbon etching products in the gas phase.

Original languageEnglish (US)
Pages (from-to)1939-1946
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number5
DOIs
StatePublished - Sep 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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