GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric: Fabrication and characterization

D. Shahrjerdi, D. I. Garcia-Gutierrez, T. Akyol, S. R. Bank, E. Tutuc, J. C. Lee, S. K. Banerjee

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Abstract

In this letter, we have investigated the physical and electrical characteristics of atomic layer deposition of Hf O2 on GaAs substrates. X-ray photoelectron spectroscopy (XPS) analysis revealed no significant reduction of arsenic oxides upon deposition of Hf O2 on GaAs using tetrakis(dimethyl-amino) hafnium [Hf (N Me2) 4] as the metallic precursor. However, XPS confirmed the absence of arsenic oxides at the interface of Hf O2 and sulfide-treated GaAs. High-resolution transmission electron microcopy analysis verified a smooth interface between Hf O2 and sulfur-passivated GaAs. In addition, frequency dispersion behavior of capacitors on p -type GaAs substrates was remarkably improved by employing an appropriate surface chemical treatment.

Original languageEnglish (US)
Article number193503
JournalApplied Physics Letters
Volume91
Issue number19
DOIs
StatePublished - Nov 19 2007

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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