Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

Han Zhao, Davood Shahrjerdi, Feng Zhu, Manhong Zhang, Hyoung Sub Kim, Injo Ok, Jung Hwan Yum, Sung Il Park, Sanjay K. Banerjee, Jack C. Lee

Research output: Contribution to journalArticle

Abstract

We present n -channel enhancement-mode inversion-type indium phosphide (InP) metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric. It has been found that applying sulfur passivation and postdeposition annealing in the process improves the drive current and subthreshold swing. Transistors on semi-insulating InP substrates show much higher drive current than the ones on p-type InP due to the asymmetric distribution of interface state along the bandgap between InP and Al2O3. The effects of transient and slow traps on the transistor performance have also been investigated using constant electrical stress measurements and pulse measurements.

Original languageEnglish (US)
Article number233508
JournalApplied Physics Letters
Volume92
Issue number23
DOIs
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Zhao, H., Shahrjerdi, D., Zhu, F., Zhang, M., Kim, H. S., Ok, I., Yum, J. H., Park, S. I., Banerjee, S. K., & Lee, J. C. (2008). Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric. Applied Physics Letters, 92(23), [233508]. https://doi.org/10.1063/1.2937117