Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al₂O₃ gate dielectric

Keyphrases

• Atomic Layer Deposited 100%
• Gate-first 100%
• Al2O3 Gate Dielectric 100%
• Indium Phosphide 100%
• MOSFET 100%
• Subthreshold Swing 20%
• Post-deposition Annealing 20%
• P-type 20%
• Drive Current 20%
• Transistor 20%
• Stress Pulse 20%
• Stress Measurement 20%
• Transistor Performance 20%
• Band Gap 20%
• Transient Trap 20%
• Semi-insulating 20%
• Mode Inversion 20%
• Interface States 20%
• Electrical Stress 20%
• Asymmetric Distribution 20%
• Enhancement-mode (E-mode) 20%
• Channel Expansion 20%
• High Drive 20%
• Sulfur Passivation 20%
• Pulse Measurements 20%

Engineering

• Current Drive 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Dielectric 100%
• Atomic Layer 100%
• Passivation 50%
• Interface State 50%

Material Science

• Indium 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Transistor 40%
• Stress Measurement 20%