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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric
Han Zhao, Davood Shahrjerdi, Feng Zhu, Manhong Zhang, Hyoung Sub Kim, Injo Ok, Jung Hwan Yum, Sung Il Park, Sanjay K. Banerjee, Jack C. Lee
Research output: Contribution to journal › Article › peer-review