Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

Han Zhao, Davood Shahrjerdi, Feng Zhu, Manhong Zhang, Hyoung Sub Kim, Injo Ok, Jung Hwan Yum, Sung Il Park, Sanjay K. Banerjee, Jack C. Lee

Research output: Contribution to journal › Article › peer-review

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Physics & Astronomy