Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

Han Zhao, Davood Shahrjerdi, Feng Zhu, Manhong Zhang, Hyoung Sub Kim, Injo Ok, Jung Hwan Yum, Sung Il Park, Sanjay K. Banerjee, Jack C. Lee

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Physics & Astronomy