Gate-voltage tunability of plasmons in single-layer graphene structures: Analytical description, impact of interface states, and concepts for terahertz devices

Shaloo Rakheja; P. Sengupta

Gate-voltage tunability of plasmons in single-layer graphene structures: Analytical description, impact of interface states, and concepts for terahertz devices

Shaloo Rakheja, P. Sengupta

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	113-121
Journal	IEEE Transactions on Nanotechnology
Volume	15
Issue number	1
State	Published - Jan 2016

Cite this

@article{3f82a9b254cd460ab65c301e488827ea,

title = "Gate-voltage tunability of plasmons in single-layer graphene structures: Analytical description, impact of interface states, and concepts for terahertz devices",

author = "Shaloo Rakheja and P. Sengupta",

year = "2016",

month = jan,

language = "English (US)",

volume = "15",

pages = "113--121",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Gate-voltage tunability of plasmons in single-layer graphene structures

T2 - Analytical description, impact of interface states, and concepts for terahertz devices

AU - Rakheja, Shaloo

AU - Sengupta, P.

PY - 2016/1

Y1 - 2016/1

M3 - Article

SN - 1536-125X

VL - 15

SP - 113

EP - 121

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 1

ER -