TY - GEN
T1 - Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD
AU - Dushaq, Ghada
AU - Nayfeh, Ammar
AU - Rasras, Mahmoud
N1 - Publisher Copyright:
© OSA 2017.
PY - 2017
Y1 - 2017
N2 - This paper presents a direct growth of germanium on silicon using standard RF-PECVD process at substrate temperature of 500° C. Ge Metal-Semiconductor-Metal photodetectors (MSM) are fabricated based on this growth. The structural characterization of the Ge layers and the electrical and optical properties of the fabricated MSM are investigated.
AB - This paper presents a direct growth of germanium on silicon using standard RF-PECVD process at substrate temperature of 500° C. Ge Metal-Semiconductor-Metal photodetectors (MSM) are fabricated based on this growth. The structural characterization of the Ge layers and the electrical and optical properties of the fabricated MSM are investigated.
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U2 - 10.1364/FIO.2017.JW4A.42
DO - 10.1364/FIO.2017.JW4A.42
M3 - Conference contribution
AN - SCOPUS:85035145810
SN - 9781943580330
T3 - Optics InfoBase Conference Papers
BT - Frontiers in Optics, FiO 2017
PB - Optica Publishing Group (formerly OSA)
T2 - Frontiers in Optics, FiO 2017
Y2 - 18 September 2017 through 21 September 2017
ER -