Germanium MOS capacitors grown on Silicon using low temperature RF-PECVD

Material Science

• Silicon 100%
• Germanium 100%
• Capacitor 100%
• Density 75%
• Metal Oxide 75%
• Oxide Semiconductor 75%
• Al2O3 50%
• Capacitance 50%
• Film 25%
• Electrical Property 25%
• Oxide Compound 25%
• Plasma-Enhanced Chemical Vapor Deposition 25%
• Transistor 25%

Keyphrases

• Capacitance-voltage Curve 33%
• High-k Interface 33%
• Radio Frequency Plasma Enhanced Chemical Vapor Deposition 33%
• Low Threading Dislocation Density 33%
• Metal Gate Electrode 33%
• High-frequency Capacitance 33%
• N2 Gas 33%
• High-low Frequency 33%
• High-frequency Methods 33%
• Terman 33%

Engineering

• Metal Gate Electrode 33%