TY - GEN
T1 - Glucose sensing using dual-gated BioFETs with 5nm-thick silicon body
AU - Wu, Ting
AU - Afzali, Ali
AU - You, Kae Dyi
AU - Kisslinger, Kim
AU - Stach, Eric
AU - Shahrjerdi, Davood
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/8/1
Y1 - 2017/8/1
N2 - Field-effect transistors (FETs) are commonly used as affinity-based electrical transducers, known as bioFETs. These sensors are, however, unable to directly detect uncharged molecules such as glucose, necessitating the use of ligand molecules. Further, the change of the electrical signal resulting from the biochemical reactions is often small. In the past decade, significant research was done to enhance the sensitivity of bioFETs using nanowire1 and nanoribbon structures. Recently, dual-gated bioFETs were also shown to exceed the Nernst limit of 59mV/pH using capacitive coupling3,4. Here, we introduce a new ligand molecule for the direct detection of glucose using bioFETs. We demonstrate the amplification of the electrical signal originating from the glucose reaction using our 'engineered' dual-gated bioFETs featuring ultra-thin silicon body and buried oxide of 5nm and 10nm, respectively.
AB - Field-effect transistors (FETs) are commonly used as affinity-based electrical transducers, known as bioFETs. These sensors are, however, unable to directly detect uncharged molecules such as glucose, necessitating the use of ligand molecules. Further, the change of the electrical signal resulting from the biochemical reactions is often small. In the past decade, significant research was done to enhance the sensitivity of bioFETs using nanowire1 and nanoribbon structures. Recently, dual-gated bioFETs were also shown to exceed the Nernst limit of 59mV/pH using capacitive coupling3,4. Here, we introduce a new ligand molecule for the direct detection of glucose using bioFETs. We demonstrate the amplification of the electrical signal originating from the glucose reaction using our 'engineered' dual-gated bioFETs featuring ultra-thin silicon body and buried oxide of 5nm and 10nm, respectively.
UR - http://www.scopus.com/inward/record.url?scp=85028030567&partnerID=8YFLogxK
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U2 - 10.1109/DRC.2017.7999421
DO - 10.1109/DRC.2017.7999421
M3 - Conference contribution
AN - SCOPUS:85028030567
T3 - Device Research Conference - Conference Digest, DRC
BT - 75th Annual Device Research Conference, DRC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 75th Annual Device Research Conference, DRC 2017
Y2 - 25 June 2017 through 28 June 2017
ER -