Grain-boundary room-temperature low-field magnetoresistance in Sr2FeMoO6 films

H. Q. Yin, J. S. Zhou, R. Dass, J. P. Zhou, J. T. McDevitt, John B. Goodenough

Research output: Contribution to journalConference articlepeer-review


Thin films of (001)-oriented Sr2FeMoO6 have been epitaxially deposited or LaAlO3 and SrTiO3 (001) substrates by pulsed laser deposition. The deposition conditions were optimized. Single-phase Sr2FeMoO6 was obtained in 100 mTorr 99.999% Ar gas at 825°C. Transport and magnetic data showed a metallic temperature dependence and a saturation magnetization Ms at 10 K of 3.2μB/f.u. However, the Curie temperature TC≈380 K was reduced from 415 K found for tetragonal polycrystalline best ceramics, which lowers Ms at 300 K in the thin films to 1.5μB/f.u. compared to 2.2μB/f.u. in the ceramics. A low remanence was attributed to the presence of antiphase boundaries. A Wheatstone bridge arrangement straddling a bicrystal boundary was used to verify that spin-dependent electron transfer through a grain boundary and not an antiphase boundary is responsible for the low-field magnetoresistance found in polycrystalline samples below TC.

Original languageEnglish (US)
Pages (from-to)6761-6763
Number of pages3
JournalJournal of Applied Physics
Issue number9 III
StatePublished - May 1 2000
Event44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States
Duration: Nov 15 1999Nov 18 1999

ASJC Scopus subject areas

  • General Physics and Astronomy


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