A computational analysis of the growth of a-Si:H films on an H-terminated Si(001)-(2×1) substrate at a temperature of 500 K through MD simulations of repeated SiH2 radical impingement. The important reactions during film growth were identified through detailed visualization of the radical trajectories. Detailed structural and chemical characterization of the deposited film based on the evolution of the structure of the film, surface morphology and roughness, surface reactivity, and surface composition showed that the deposited films have low dangling-bond densities, high surface H coverage, rough surface morphologies, voids, and columnar structures.
ASJC Scopus subject areas
- Physics and Astronomy(all)