TY - JOUR
T1 - Growth and characterization of hydrogenated amorphous silicon thin films from SiH2 radical precursor
T2 - Atomic-scale analysis
AU - Sriraman, Saravanapriyan
AU - Aydil, Eray S.
AU - Maroudas, Dimitrios
PY - 2004/2/15
Y1 - 2004/2/15
N2 - A computational analysis of the growth of a-Si:H films on an H-terminated Si(001)-(2×1) substrate at a temperature of 500 K through MD simulations of repeated SiH2 radical impingement. The important reactions during film growth were identified through detailed visualization of the radical trajectories. Detailed structural and chemical characterization of the deposited film based on the evolution of the structure of the film, surface morphology and roughness, surface reactivity, and surface composition showed that the deposited films have low dangling-bond densities, high surface H coverage, rough surface morphologies, voids, and columnar structures.
AB - A computational analysis of the growth of a-Si:H films on an H-terminated Si(001)-(2×1) substrate at a temperature of 500 K through MD simulations of repeated SiH2 radical impingement. The important reactions during film growth were identified through detailed visualization of the radical trajectories. Detailed structural and chemical characterization of the deposited film based on the evolution of the structure of the film, surface morphology and roughness, surface reactivity, and surface composition showed that the deposited films have low dangling-bond densities, high surface H coverage, rough surface morphologies, voids, and columnar structures.
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U2 - 10.1063/1.1636512
DO - 10.1063/1.1636512
M3 - Article
AN - SCOPUS:1542349055
SN - 0021-8979
VL - 95
SP - 1792
EP - 1805
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 4
ER -