Growth of diamond films by ECR plasma enhanced chemical vapor deposition

E. Koretzky, S. P. Kuo, S. C. Kuo

Research output: Contribution to journalConference article

Abstract

An electron cyclotron resonance (ECR) system for plasma assisted chemical vapor deposition (PACVD) of diamond film is designed and setup. The operating parameters of the ECR plasma system are: microwave frequency - 2.45 GHz, microwave power - 300-500 W, resonance magnetic field - 875 Gauss, pressure - 10-4 - 10-3 torr, and flow rate - up to 10 sccm. The low pressure ECR plasma operation is switched, in situ, to a moderate pressure microwave plasma after a few hours of surface treatment by the ECR produced energetic ions. The process of PACVD of diamond film is continued for 15 hours. Structural information on the film is obtained using X-ray diffraction and the 76° scattering peak from the diamond (220) crystalline is measured.

Original languageEnglish (US)
Pages (from-to)224-225
Number of pages2
JournalIEEE International Conference on Plasma Science
StatePublished - 1998
EventProceedings of the 1998 IEEE International Conference on Plasma Science - Raleigh, NC, USA
Duration: Jun 1 1998Jun 4 1998

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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