Abstract
We present the first study of fractal growth in a solid-solid phase transition. A highly ramified, randomly branched crystalline phase was obtained by heating thin amorphous GeSe2 films. Our result for the fractal dimension of the above structure, D 1.7, is in agreement with that of two-dimensional diffusion-limited aggregates. Possible mechanisms resulting in fractal growth are discussed.
Original language | English (US) |
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Pages (from-to) | 4012-4015 |
Number of pages | 4 |
Journal | Physical Review A |
Volume | 35 |
Issue number | 9 |
DOIs | |
State | Published - 1987 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics