Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric

D. Shahrjerdi; J. Nah; B. Hekmatshoar; T. Akyol; M. Ramon; E. Tutuc; S. K. Banerjee

doi:10.1063/1.3521284

Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al₂ O₃ gate dielectric

D. Shahrjerdi, J. Nah, B. Hekmatshoar, T. Akyol, M. Ramon, E. Tutuc, S. K. Banerjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars. The Hall data reveal the existence of a reduced mobile charge density in the channel due to significant charge trapping. The peak electron mobility was found to be relatively high (∼2140 cm² /V s), in agreement with inherent high carrier mobility of electrons in III-V materials.

Original language	English (US)
Article number	213506
Journal	Applied Physics Letters
Volume	97
Issue number	21
DOIs	https://doi.org/10.1063/1.3521284
State	Published - Nov 22 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3521284

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title = "Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric",

abstract = "We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars. The Hall data reveal the existence of a reduced mobile charge density in the channel due to significant charge trapping. The peak electron mobility was found to be relatively high (∼2140 cm2 /V s), in agreement with inherent high carrier mobility of electrons in III-V materials.",

author = "D. Shahrjerdi and J. Nah and B. Hekmatshoar and T. Akyol and M. Ramon and E. Tutuc and Banerjee, {S. K.}",

note = "Funding Information: This work was supported in part by DARPA and Micron Foundation.",

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AU - Shahrjerdi, D.

AU - Nah, J.

AU - Hekmatshoar, B.

AU - Akyol, T.

AU - Ramon, M.

AU - Tutuc, E.

AU - Banerjee, S. K.

N1 - Funding Information: This work was supported in part by DARPA and Micron Foundation.

PY - 2010/11/22

Y1 - 2010/11/22

N2 - We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars. The Hall data reveal the existence of a reduced mobile charge density in the channel due to significant charge trapping. The peak electron mobility was found to be relatively high (∼2140 cm2 /V s), in agreement with inherent high carrier mobility of electrons in III-V materials.

AB - We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars. The Hall data reveal the existence of a reduced mobile charge density in the channel due to significant charge trapping. The peak electron mobility was found to be relatively high (∼2140 cm2 /V s), in agreement with inherent high carrier mobility of electrons in III-V materials.

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Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al₂ O₃ gate dielectric

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