TY - JOUR
T1 - Heteroepitaxial growth of Cu2O thin film on ZnO by metal organic chemical vapor deposition
AU - Jeong, Seong Ho
AU - Aydil, Eray S.
N1 - Funding Information:
This work was supported partially by the MRSEC Program of the National Science Foundation under Award Number DMR-0819885. Part of this work were carried out in the Institute of Technology Characterization Facility, University of Minnesota, which has received capital equipment funding from the NSF through the MRSEC, ERC and MRI programs. Part of this work was carried out in the Institute of Technology Nanofabrication Center, University of Minnesota, which receives partial support from NSF through the NNIN program. SeongHo Jeong was supported by a Samsung Fellowship.
PY - 2009/8/15
Y1 - 2009/8/15
N2 - Cuprous oxide (Cu2O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C5HF6O2)2] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu2O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)Cu2O∥(0 0 0 2)ZnO; [0 0 1]Cu2O∥[1 2̄ 1 0]ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p-n junction solar cells or diodes.
AB - Cuprous oxide (Cu2O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C5HF6O2)2] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu2O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)Cu2O∥(0 0 0 2)ZnO; [0 0 1]Cu2O∥[1 2̄ 1 0]ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p-n junction solar cells or diodes.
KW - A1. X-ray diffraction
KW - A3. Metal organic chemical vapor deposition
KW - A3. Solid phase epitaxy
KW - B1. Oxides
KW - B2. Semiconducting materials
KW - B3. Heterojunction semiconductor devices
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U2 - 10.1016/j.jcrysgro.2009.07.020
DO - 10.1016/j.jcrysgro.2009.07.020
M3 - Article
AN - SCOPUS:68549135102
SN - 0022-0248
VL - 311
SP - 4188
EP - 4192
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 17
ER -