Abstract
Cuprous oxide (Cu2O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C5HF6O2)2] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu2O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)Cu2O∥(0 0 0 2)ZnO; [0 0 1]Cu2O∥[1 2̄ 1 0]ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p-n junction solar cells or diodes.
Original language | English (US) |
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Pages (from-to) | 4188-4192 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 311 |
Issue number | 17 |
DOIs | |
State | Published - Aug 15 2009 |
Keywords
- A1. X-ray diffraction
- A3. Metal organic chemical vapor deposition
- A3. Solid phase epitaxy
- B1. Oxides
- B2. Semiconducting materials
- B3. Heterojunction semiconductor devices
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry