Hierarchical Transparent Back Contacts for Bifacial CdTe PV

B. Edward Sartor; Teng Zhang; Christopher P. Muzzillo; Chungho Lee; Ryan Muzzio; Yury Gogotsi; Matthew O. Reese; André D. Taylor

doi:10.1021/acsenergylett.4c00156

Hierarchical Transparent Back Contacts for Bifacial CdTe PV

B. Edward Sartor, Teng Zhang, Christopher P. Muzzillo, Chungho Lee, Ryan Muzzio, Yury Gogotsi, Matthew O. Reese, André D. Taylor

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A hierarchical transparent back contact leveraging an AlGaO_x passivating layer, Ti₃C₂T_x MXene with a high work function, and a transparent cracked film lithography (CFL) templated nanogrid is demonstrated on copper-free cadmium telluride (CdTe) devices. AlGaO_x improves device open-circuit voltage but reduces the fill factor when using a CFL-templated metal contact. Including a Ti₃C₂T_x interlayer improves the fill factor, lowers detrimental Schottky barriers, and enables metallization with CFL by providing transverse conduction into the nanogrid. The bifacial performance of an AlGaO_x/Ti₃C₂T_x/CFL gold contact is evaluated, reaching 19.5% frontside efficiency and 2.8% backside efficiency under 1-sun illumination for a copper-free, group-V doped CdTe device. Under dual illumination, device power generation reached 200 W/m² with 0.1 sun backside illumination.

Original language	English (US)
Pages (from-to)	1617-1623
Number of pages	7
Journal	ACS Energy Letters
Volume	9
Issue number	4
DOIs	https://doi.org/10.1021/acsenergylett.4c00156
State	Published - Apr 12 2024

ASJC Scopus subject areas

Chemistry (miscellaneous)
Renewable Energy, Sustainability and the Environment
Fuel Technology
Energy Engineering and Power Technology
Materials Chemistry

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10.1021/acsenergylett.4c00156

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title = "Hierarchical Transparent Back Contacts for Bifacial CdTe PV",

abstract = "A hierarchical transparent back contact leveraging an AlGaOx passivating layer, Ti3C2Tx MXene with a high work function, and a transparent cracked film lithography (CFL) templated nanogrid is demonstrated on copper-free cadmium telluride (CdTe) devices. AlGaOx improves device open-circuit voltage but reduces the fill factor when using a CFL-templated metal contact. Including a Ti3C2Tx interlayer improves the fill factor, lowers detrimental Schottky barriers, and enables metallization with CFL by providing transverse conduction into the nanogrid. The bifacial performance of an AlGaOx/Ti3C2Tx/CFL gold contact is evaluated, reaching 19.5% frontside efficiency and 2.8% backside efficiency under 1-sun illumination for a copper-free, group-V doped CdTe device. Under dual illumination, device power generation reached 200 W/m2 with 0.1 sun backside illumination.",

author = "Sartor, {B. Edward} and Teng Zhang and Muzzillo, {Christopher P.} and Chungho Lee and Ryan Muzzio and Yury Gogotsi and Reese, {Matthew O.} and Taylor, {Andr{\'e} D.}",

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doi = "10.1021/acsenergylett.4c00156",

language = "English (US)",

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AU - Sartor, B. Edward

AU - Zhang, Teng

AU - Muzzillo, Christopher P.

AU - Lee, Chungho

AU - Muzzio, Ryan

AU - Gogotsi, Yury

AU - Reese, Matthew O.

AU - Taylor, André D.

PY - 2024/4/12

Y1 - 2024/4/12

N2 - A hierarchical transparent back contact leveraging an AlGaOx passivating layer, Ti3C2Tx MXene with a high work function, and a transparent cracked film lithography (CFL) templated nanogrid is demonstrated on copper-free cadmium telluride (CdTe) devices. AlGaOx improves device open-circuit voltage but reduces the fill factor when using a CFL-templated metal contact. Including a Ti3C2Tx interlayer improves the fill factor, lowers detrimental Schottky barriers, and enables metallization with CFL by providing transverse conduction into the nanogrid. The bifacial performance of an AlGaOx/Ti3C2Tx/CFL gold contact is evaluated, reaching 19.5% frontside efficiency and 2.8% backside efficiency under 1-sun illumination for a copper-free, group-V doped CdTe device. Under dual illumination, device power generation reached 200 W/m2 with 0.1 sun backside illumination.

AB - A hierarchical transparent back contact leveraging an AlGaOx passivating layer, Ti3C2Tx MXene with a high work function, and a transparent cracked film lithography (CFL) templated nanogrid is demonstrated on copper-free cadmium telluride (CdTe) devices. AlGaOx improves device open-circuit voltage but reduces the fill factor when using a CFL-templated metal contact. Including a Ti3C2Tx interlayer improves the fill factor, lowers detrimental Schottky barriers, and enables metallization with CFL by providing transverse conduction into the nanogrid. The bifacial performance of an AlGaOx/Ti3C2Tx/CFL gold contact is evaluated, reaching 19.5% frontside efficiency and 2.8% backside efficiency under 1-sun illumination for a copper-free, group-V doped CdTe device. Under dual illumination, device power generation reached 200 W/m2 with 0.1 sun backside illumination.

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Hierarchical Transparent Back Contacts for Bifacial CdTe PV

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ASJC Scopus subject areas

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