High device yield carbon nanotube NFETs for high-performance logic applications

Davood Shahrjerdi, Aaron D. Franklin, Satoshi Oida, George S. Tulevski, Shu Jen Han, James B. Hannon, Wilfried Haensch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages23.3.1-23.3.4
DOIs
StatePublished - 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Shahrjerdi, D., Franklin, A. D., Oida, S., Tulevski, G. S., Han, S. J., Hannon, J. B., & Haensch, W. (2011). High device yield carbon nanotube NFETs for high-performance logic applications. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 23.3.1-23.3.4). [6131596] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131596