High device yield carbon nanotube NFETs for high-performance logic applications

Davood Shahrjerdi; Aaron D. Franklin; Satoshi Oida; George S. Tulevski; Shu Jen Han; James B. Hannon; Wilfried Haensch

doi:10.1109/IEDM.2011.6131596

High device yield carbon nanotube NFETs for high-performance logic applications

Davood Shahrjerdi, Aaron D. Franklin, Satoshi Oida, George S. Tulevski, Shu Jen Han, James B. Hannon, Wilfried Haensch

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions.

Original language	English (US)
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	23.3.1-23.3.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131596
State	Published - 2011
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: Dec 5 2011 → Dec 7 2011

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	12/5/11 → 12/7/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2011.6131596

Cite this

Shahrjerdi, D., Franklin, A. D., Oida, S., Tulevski, G. S., Han, S. J., Hannon, J. B., & Haensch, W. (2011). High device yield carbon nanotube NFETs for high-performance logic applications. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 23.3.1-23.3.4). Article 6131596 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131596

High device yield carbon nanotube NFETs for high-performance logic applications. / Shahrjerdi, Davood; Franklin, Aaron D.; Oida, Satoshi et al.
2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 23.3.1-23.3.4 6131596 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shahrjerdi, D, Franklin, AD, Oida, S, Tulevski, GS, Han, SJ, Hannon, JB & Haensch, W 2011, High device yield carbon nanotube NFETs for high-performance logic applications. in 2011 International Electron Devices Meeting, IEDM 2011., 6131596, Technical Digest - International Electron Devices Meeting, IEDM, pp. 23.3.1-23.3.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131596

@inproceedings{98cb39c9bf4e4269a8db6a4d76f64b03,

title = "High device yield carbon nanotube NFETs for high-performance logic applications",

abstract = "We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions.",

author = "Davood Shahrjerdi and Franklin, {Aaron D.} and Satoshi Oida and Tulevski, {George S.} and Han, {Shu Jen} and Hannon, {James B.} and Wilfried Haensch",

year = "2011",

doi = "10.1109/IEDM.2011.6131596",

language = "English (US)",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "23.3.1--23.3.4",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

}

TY - GEN

T1 - High device yield carbon nanotube NFETs for high-performance logic applications

AU - Shahrjerdi, Davood

AU - Franklin, Aaron D.

AU - Oida, Satoshi

AU - Tulevski, George S.

AU - Han, Shu Jen

AU - Hannon, James B.

AU - Haensch, Wilfried

PY - 2011

Y1 - 2011

N2 - We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions.

AB - We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions.

UR - http://www.scopus.com/inward/record.url?scp=84857004403&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857004403&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2011.6131596

DO - 10.1109/IEDM.2011.6131596

M3 - Conference contribution

AN - SCOPUS:84857004403

SN - 9781457705052

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 23.3.1-23.3.4

BT - 2011 International Electron Devices Meeting, IEDM 2011

T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -

High device yield carbon nanotube NFETs for high-performance logic applications

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this