@inproceedings{3c4910af7af44300ad2fccc45e0f8b82,
title = "High-efficiency heterojunction solar cells on crystalline silicon and germanium substrates enabled by low-temperature epitaxial growth of silicon",
abstract = "We demonstrate high-efficiency heterojunction (HJ) solar cells realized by epitaxial growth of thin layers of highly-doped Si on crystalline Si (c-Si) and crystalline Ge (c-Ge) substrates using plasma-enhanced chemical vapor deposition (PECVD) at temperatures as low as 150°C. We have achieved a conversion efficiency of 21.4% on p-type c-Si substrates textured by random pyramids and Al-doped zinc oxide (ZnO:Al) electrodes sputtered at room-temperature. To the best of our knowledge, this is the highest conversion efficiency reported for HJ solar cells on p-type c-Si substrates. We have achieved conversion efficiencies of 5.9% and 6.4% on n-type and p-type c-Ge substrates, respectively, which are comparable with efficiencies reported for conventional c-Ge cells requiring process temperatures up to 600°C.",
keywords = "amorphous silicon, epitaxial growth, germanium, heterojunction, photovoltaic cells, silicon",
author = "Bahman Hekmatshoar and Davood Shahrjerdi and Bedell, {Stephen W.} and Sadana, {Devendra K.}",
year = "2012",
doi = "10.1109/PVSC.2012.6317898",
language = "English (US)",
isbn = "9781467300643",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "1590--1593",
booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",
note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",
}