High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology

D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, J. A. Ott, T. Gokmen, D. K. Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate the effectiveness of our disruptive controlled spalling technology for making high-efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem solar cells. The controlled spalling technique was employed to separate the thin-film tandem cells (∼14μm) from the host Ge substrates. The electrical characteristics of the thin-film cells (spalled) were examined and compared against the bulk cells (non-spalled) on original Ge wafers. Furthermore, the structural integrity of the transferred thin-film cells was scrutinized using transmission electron microscopy. Our results confirm that the structural properties and the intrinsic material parameters (such as minority carrier lifetime, surface recombination velocity, etc) of the thin-film tandem solar cells are unchanged after spalling.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages974-977
Number of pages4
DOIs
StatePublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Keywords

  • layer transfer
  • tandem junction
  • thin-film

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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