High gain photodetection by barrier modulation in compensated Schottky junctions

E. L. Wolf

Research output: Chapter in Book/Report/Conference proceedingChapter


A detailed study of barrier modulation mechanism of photoconductive response has been carried out in modified Schottky barrier contacts of gold to conductive CdS. The forward bias I-V characteristics are shown to be well described by the usual thermionic diode law with a light dependent barrier height V//B plus V//H. The barrier height and its change with illumination minus 0. 23 V in a typical diode at high light intensity, have been determined by photoemission and capacitance measurements, as well as from the voltage and temperature dependences of ln I. The limiting performance of this type of photodetector is discussed.

Original languageEnglish (US)
Title of host publicationMetal-semiconductor contacts
EditorsM. Pepper
Place of PublicationLondon and Bristol
PublisherThe Institute of London
Number of pages11
StatePublished - 1974
EventConf on Met-Semicond Contacts, Proc, Pap - Manchester, Engl
Duration: Apr 3 1974Apr 4 1974

Publication series

NameConference Series Number 22


OtherConf on Met-Semicond Contacts, Proc, Pap
CityManchester, Engl

ASJC Scopus subject areas

  • Engineering(all)


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