High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C

D. Shahrjerdi; B. Hekmatshoar; S. S. Mohajerzadeh; A. Khakifirooz

doi:10.1109/DRC.2003.1226884

High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C

D. Shahrjerdi, B. Hekmatshoar, S. S. Mohajerzadeh, A. Khakifirooz

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, depletion mode poly-Ge TFTs with effective hole mobility of 110 cm²/Vs are fabricated on flexible PET substrates. Process temperature is kept below 130°C, taking advantage of a novel stress-assisted crystallization technique.

Original language	English (US)
Title of host publication	61st Device Research Conference, DRC 2003 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	85-86
Number of pages	2
ISBN (Electronic)	0780377273
DOIs	https://doi.org/10.1109/DRC.2003.1226884
State	Published - 2003
Event	61st Device Research Conference, DRC 2003 - Salt Lake City, United States Duration: Jun 23 2003 → Jun 25 2003

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2003-January
ISSN (Print)	1548-3770

Other

Other	61st Device Research Conference, DRC 2003
Country/Territory	United States
City	Salt Lake City
Period	6/23/03 → 6/25/03

Keywords

Compressive stress
Copper
Crystallization
Plastics
Positron emission tomography
Substrates
Temperature
Tensile strain
Tensile stress
Thermomechanical processes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2003.1226884

Cite this

Shahrjerdi, D., Hekmatshoar, B., Mohajerzadeh, S. S., & Khakifirooz, A. (2003). High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C. In 61st Device Research Conference, DRC 2003 - Conference Digest (pp. 85-86). Article 1226884 (Device Research Conference - Conference Digest, DRC; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2003.1226884

High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C. / Shahrjerdi, D.; Hekmatshoar, B.; Mohajerzadeh, S. S. et al.
61st Device Research Conference, DRC 2003 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2003. p. 85-86 1226884 (Device Research Conference - Conference Digest, DRC; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shahrjerdi, D, Hekmatshoar, B, Mohajerzadeh, SS & Khakifirooz, A 2003, High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C. in 61st Device Research Conference, DRC 2003 - Conference Digest., 1226884, Device Research Conference - Conference Digest, DRC, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 85-86, 61st Device Research Conference, DRC 2003, Salt Lake City, United States, 6/23/03. https://doi.org/10.1109/DRC.2003.1226884

@inproceedings{b3d33ca95a6f45acabedd97e28bcb4d7,

title = "High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C",

abstract = "In this paper, depletion mode poly-Ge TFTs with effective hole mobility of 110 cm2/Vs are fabricated on flexible PET substrates. Process temperature is kept below 130°C, taking advantage of a novel stress-assisted crystallization technique.",

keywords = "Compressive stress, Copper, Crystallization, Plastics, Positron emission tomography, Substrates, Temperature, Tensile strain, Tensile stress, Thermomechanical processes",

author = "D. Shahrjerdi and B. Hekmatshoar and Mohajerzadeh, {S. S.} and A. Khakifirooz",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 61st Device Research Conference, DRC 2003 ; Conference date: 23-06-2003 Through 25-06-2003",

year = "2003",

doi = "10.1109/DRC.2003.1226884",

language = "English (US)",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "85--86",

booktitle = "61st Device Research Conference, DRC 2003 - Conference Digest",

}

TY - GEN

T1 - High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C

AU - Shahrjerdi, D.

AU - Hekmatshoar, B.

AU - Mohajerzadeh, S. S.

AU - Khakifirooz, A.

PY - 2003

Y1 - 2003

N2 - In this paper, depletion mode poly-Ge TFTs with effective hole mobility of 110 cm2/Vs are fabricated on flexible PET substrates. Process temperature is kept below 130°C, taking advantage of a novel stress-assisted crystallization technique.

AB - In this paper, depletion mode poly-Ge TFTs with effective hole mobility of 110 cm2/Vs are fabricated on flexible PET substrates. Process temperature is kept below 130°C, taking advantage of a novel stress-assisted crystallization technique.

KW - Compressive stress

KW - Copper

KW - Crystallization

KW - Plastics

KW - Positron emission tomography

KW - Substrates

KW - Temperature

KW - Tensile strain

KW - Tensile stress

KW - Thermomechanical processes

UR - http://www.scopus.com/inward/record.url?scp=4544388852&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4544388852&partnerID=8YFLogxK

U2 - 10.1109/DRC.2003.1226884

DO - 10.1109/DRC.2003.1226884

M3 - Conference contribution

AN - SCOPUS:4544388852

T3 - Device Research Conference - Conference Digest, DRC

SP - 85

EP - 86

BT - 61st Device Research Conference, DRC 2003 - Conference Digest

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 61st Device Research Conference, DRC 2003

Y2 - 23 June 2003 through 25 June 2003

ER -

High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

Access to Document

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