High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C

D. Shahrjerdi, B. Hekmatshoar, S. S. Mohajerzadeh, A. Khakifirooz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, depletion mode poly-Ge TFTs with effective hole mobility of 110 cm2/Vs are fabricated on flexible PET substrates. Process temperature is kept below 130°C, taking advantage of a novel stress-assisted crystallization technique.

Original languageEnglish (US)
Title of host publication61st Device Research Conference, DRC 2003 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages85-86
Number of pages2
ISBN (Electronic)0780377273
DOIs
StatePublished - 2003
Event61st Device Research Conference, DRC 2003 - Salt Lake City, United States
Duration: Jun 23 2003Jun 25 2003

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2003-January
ISSN (Print)1548-3770

Other

Other61st Device Research Conference, DRC 2003
CountryUnited States
CitySalt Lake City
Period6/23/036/25/03

Keywords

  • Compressive stress
  • Copper
  • Crystallization
  • Plastics
  • Positron emission tomography
  • Substrates
  • Temperature
  • Tensile strain
  • Tensile stress
  • Thermomechanical processes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Shahrjerdi, D., Hekmatshoar, B., Mohajerzadeh, S. S., & Khakifirooz, A. (2003). High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C. In 61st Device Research Conference, DRC 2003 - Conference Digest (pp. 85-86). [1226884] (Device Research Conference - Conference Digest, DRC; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2003.1226884