High-performance air-stable n-type carbon nanotube transistors with erbium contacts

Davood Shahrjerdi, Aaron D. Franklin, Satoshi Oida, John A. Ott, George S. Tulevski, Wilfried Haensch

Research output: Contribution to journalArticle

Abstract

So far, realization of reproducible n-type carbon nanotube (CNT) transistors suitable for integrated digital applications has been a difficult task. In this work, hundreds of n-type CNT transistors from three different low work function metals - erbium, lanthanum, and yttrium - are studied and benchmarked against p-type devices with palladium contacts. The crucial role of metal type and deposition conditions is elucidated with respect to overall yield and performance of the n-type devices. It is found that high oxidation rates and sensitivity to deposition conditions are the major causes for the lower yield and large variation in performance of n-type CNT devices with low work function metal contacts. Considerable improvement in device yield is attained using erbium contacts evaporated at high deposition rates. Furthermore, the air-stability of our n-type transistors is studied in light of the extreme sensitivity of these metals to oxidation.

Original languageEnglish (US)
Pages (from-to)8303-8308
Number of pages6
JournalACS nano
Volume7
Issue number9
DOIs
StatePublished - Sep 24 2013

Keywords

  • carbon nanotube
  • device yield
  • low work function metals
  • n-type transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Shahrjerdi, D., Franklin, A. D., Oida, S., Ott, J. A., Tulevski, G. S., & Haensch, W. (2013). High-performance air-stable n-type carbon nanotube transistors with erbium contacts. ACS nano, 7(9), 8303-8308. https://doi.org/10.1021/nn403935v