High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness

H. W. Huang, H. C. Kuo, C. F. Lai, C. E. Lee, C. W. Chiu, T. C. Lu, S. C. Wang, C. H. Lin, K. M. Leung

    Research output: Contribution to journalArticle

    Abstract

    We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO2 -SiO2 omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO2 -SiO2 ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace.

    Original languageEnglish (US)
    Pages (from-to)565-567
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Volume19
    Issue number8
    DOIs
    StatePublished - Apr 15 2007

    Keywords

    • Flip-chip
    • Light-emitting diode (LED)
    • Omnidirectional reflector (ODR)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

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  • Cite this

    Huang, H. W., Kuo, H. C., Lai, C. F., Lee, C. E., Chiu, C. W., Lu, T. C., Wang, S. C., Lin, C. H., & Leung, K. M. (2007). High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness. IEEE Photonics Technology Letters, 19(8), 565-567. https://doi.org/10.1109/LPT.2007.893829