High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness

H. W. Huang; H. C. Kuo; C. F. Lai; C. E. Lee; C. W. Chiu; T. C. Lu; S. C. Wang; C. H. Lin; K. M. Leung

doi:10.1109/LPT.2007.893829

High-performance GaN-based vertical-injection light-emitting diodes with TiO₂-SiO₂ omnidirectional reflector and n-GaN roughness

H. W. Huang, H. C. Kuo, C. F. Lai, C. E. Lee, C. W. Chiu, T. C. Lu, S. C. Wang, C. H. Lin, K. M. Leung

Research output: Contribution to journal › Article › peer-review

Abstract

We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO₂ -SiO₂ omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO₂ -SiO₂ ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace.

Original language	English (US)
Pages (from-to)	565-567
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2007.893829
State	Published - Apr 15 2007

Keywords

Flip-chip
Light-emitting diode (LED)
Omnidirectional reflector (ODR)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2007.893829

Cite this

High-performance GaN-based vertical-injection light-emitting diodes with TiO₂-SiO₂ omnidirectional reflector and n-GaN roughness. / Huang, H. W.; Kuo, H. C.; Lai, C. F.; Lee, C. E.; Chiu, C. W.; Lu, T. C.; Wang, S. C.; Lin, C. H.; Leung, K. M.

In: IEEE Photonics Technology Letters, Vol. 19, No. 8, 15.04.2007, p. 565-567.

Research output: Contribution to journal › Article › peer-review

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title = "High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness",

abstract = "We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO2 -SiO2 omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO2 -SiO2 ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace.",

keywords = "Flip-chip, Light-emitting diode (LED), Omnidirectional reflector (ODR)",

author = "Huang, {H. W.} and Kuo, {H. C.} and Lai, {C. F.} and Lee, {C. E.} and Chiu, {C. W.} and Lu, {T. C.} and Wang, {S. C.} and Lin, {C. H.} and Leung, {K. M.}",

note = "Funding Information: Manuscript received November 17, 2006; revised January 16, 2007. This work was supported by the National Science Council of the Republic of China (R.O.C.) in Taiwan under Contract NSC 94-2120-M009-007 and Contract NSC 94-2752-E009-007-PAE.",

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AU - Huang, H. W.

AU - Kuo, H. C.

AU - Lai, C. F.

AU - Lee, C. E.

AU - Chiu, C. W.

AU - Lu, T. C.

AU - Wang, S. C.

AU - Lin, C. H.

AU - Leung, K. M.

N1 - Funding Information: Manuscript received November 17, 2006; revised January 16, 2007. This work was supported by the National Science Council of the Republic of China (R.O.C.) in Taiwan under Contract NSC 94-2120-M009-007 and Contract NSC 94-2752-E009-007-PAE.

PY - 2007/4/15

Y1 - 2007/4/15

N2 - We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO2 -SiO2 omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO2 -SiO2 ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace.

AB - We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO2 -SiO2 omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm was integrated with patterned conducting channels for the purpose of vertical current spreading. With the help of laser lift-off and photo-electrochemical etching technologies, at a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light-output power and the external quantum efficiency of our thin-film LED with TiO2 -SiO2 ODR reached 330 mW and 26.7%. The result demonstrated 18% power enhancement when compared with the results from the thin-film LED with Al reflector replace.

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KW - Light-emitting diode (LED)

KW - Omnidirectional reflector (ODR)

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