High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness

H. W. Huang, H. C. Kuo, C. F. Lai, C. E. Lee, C. W. Chiu, T. C. Lu, S. C. Wang, C. H. Lin, K. M. Leung

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