Abstract
After a short introduction on the theory and instrumentation of Raman spectroscopy, its application for local stress and temperature measurements in semiconductor devices is discussed. Examples are given for silicon isolation structures, transistors, solder bumps and back-grinding. It is shown how the resolution can be improved by using an oil immersion objective and deconvolution techniques. Different imaging modes are discussed and their resolution is compared. Examples of 1-dimensional and of 2-dimensional scans are shown.
Original language | English (US) |
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Pages (from-to) | 239-252 |
Number of pages | 14 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3897 |
State | Published - 1999 |
Event | Proceedings of the 1999 Advanced Photonic Sensors and Applications - Singapore, Singapore Duration: Nov 30 1999 → Dec 3 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering