High-resolution stress and temperature measurements in semiconductor devices using micro-Raman spectroscopy

Ingrid De Wolf, Jian Chen, Mahmoud Rasras, W. Merlijn van Spengen, Veerle Simons

Research output: Contribution to journalConference articlepeer-review

Abstract

After a short introduction on the theory and instrumentation of Raman spectroscopy, its application for local stress and temperature measurements in semiconductor devices is discussed. Examples are given for silicon isolation structures, transistors, solder bumps and back-grinding. It is shown how the resolution can be improved by using an oil immersion objective and deconvolution techniques. Different imaging modes are discussed and their resolution is compared. Examples of 1-dimensional and of 2-dimensional scans are shown.

Original languageEnglish (US)
Pages (from-to)239-252
Number of pages14
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3897
StatePublished - 1999
EventProceedings of the 1999 Advanced Photonic Sensors and Applications - Singapore, Singapore
Duration: Nov 30 1999Dec 3 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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