Highly non-linear and reliable amorphous silicon based back-to-back Schottky diode as selector device for large scale RRAM arrays

Cheng Chih Hsieh; Yao Feng Chang; Ying Chen Chen; Davood Shahrjerdi; Sanjay K. Banerjee

doi:10.1149/2.0041709jss

Highly non-linear and reliable amorphous silicon based back-to-back Schottky diode as selector device for large scale RRAM arrays

Cheng Chih Hsieh, Yao Feng Chang, Ying Chen Chen, Davood Shahrjerdi, Sanjay K. Banerjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, we present silicon process compatible, stable and reliable (>10⁸ cycles), high non-linearity ratio at a half-read voltage (>5 × 10⁵), high speed (<60 ns), and low operating voltage (<3V) back-to-back Schottky diodes. Materials choice of electrode, the thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory (RRAM) arrays.

Original language	English (US)
Pages (from-to)	N143-N147
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	9
DOIs	https://doi.org/10.1149/2.0041709jss
State	Published - 2017

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2.0041709jss

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title = "Highly non-linear and reliable amorphous silicon based back-to-back Schottky diode as selector device for large scale RRAM arrays",

abstract = "In this work, we present silicon process compatible, stable and reliable (>108 cycles), high non-linearity ratio at a half-read voltage (>5 × 105), high speed (<60 ns), and low operating voltage (<3V) back-to-back Schottky diodes. Materials choice of electrode, the thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory (RRAM) arrays.",

author = "Hsieh, {Cheng Chih} and Chang, {Yao Feng} and Chen, {Ying Chen} and Davood Shahrjerdi and Banerjee, {Sanjay K.}",

note = "Funding Information: This work was supported by National Science Foundation (NSF), National Nanotechnologies Coordinated Infrastructure (NNCI), and Nanomanufacturing Systems for Mobile Computing and Mobile Energy Technologies (NASCENT). Publisher Copyright: {\textcopyright} The Author(s) 2017. Published by ECS. All rights reserved.",

year = "2017",

doi = "10.1149/2.0041709jss",

language = "English (US)",

volume = "6",

pages = "N143--N147",

journal = "ECS Journal of Solid State Science and Technology",

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T1 - Highly non-linear and reliable amorphous silicon based back-to-back Schottky diode as selector device for large scale RRAM arrays

AU - Hsieh, Cheng Chih

AU - Chang, Yao Feng

AU - Chen, Ying Chen

AU - Shahrjerdi, Davood

AU - Banerjee, Sanjay K.

N1 - Funding Information: This work was supported by National Science Foundation (NSF), National Nanotechnologies Coordinated Infrastructure (NNCI), and Nanomanufacturing Systems for Mobile Computing and Mobile Energy Technologies (NASCENT). Publisher Copyright: © The Author(s) 2017. Published by ECS. All rights reserved.

PY - 2017

Y1 - 2017

N2 - In this work, we present silicon process compatible, stable and reliable (>108 cycles), high non-linearity ratio at a half-read voltage (>5 × 105), high speed (<60 ns), and low operating voltage (<3V) back-to-back Schottky diodes. Materials choice of electrode, the thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory (RRAM) arrays.

AB - In this work, we present silicon process compatible, stable and reliable (>108 cycles), high non-linearity ratio at a half-read voltage (>5 × 105), high speed (<60 ns), and low operating voltage (<3V) back-to-back Schottky diodes. Materials choice of electrode, the thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory (RRAM) arrays.

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Highly non-linear and reliable amorphous silicon based back-to-back Schottky diode as selector device for large scale RRAM arrays

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