Abstract
Hot-carrier effects and electromigration are the two important failure mechanisms that significantly impact the long-term reliability of high-density VLSI ICs. In this paper, we present a probabilistic switch-level method for identifying the most susceptible hot-carrier MOSFETs and improving their hot-carrier reliability using two techniques - (i) reordering of inputs to logic gates and (ii) selective MOSFET sizing. We also show that for a given circuit, the best design in terms of hot-carrier reliability does not necessarily coincide with the best design in terms of power consumption.
Original language | English (US) |
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Title of host publication | Proceedings - Design Automation Conference |
Publisher | IEEE |
Pages | 819-824 |
Number of pages | 6 |
State | Published - 1996 |
Event | Proceedings of the 1996 33rd Annual Design Automation Conference - Las Vegas, NV, USA Duration: Jun 3 1996 → Jun 7 1996 |
Other
Other | Proceedings of the 1996 33rd Annual Design Automation Conference |
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City | Las Vegas, NV, USA |
Period | 6/3/96 → 6/7/96 |
ASJC Scopus subject areas
- Hardware and Architecture
- Control and Systems Engineering