TY - JOUR
T1 - Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs
AU - Isakov, Ivan
AU - Paterson, Alexandra F.
AU - Solomeshch, Olga
AU - Tessler, Nir
AU - Zhang, Qiang
AU - Li, Jun
AU - Zhang, Xixiang
AU - Fei, Zhuping
AU - Heeney, Martin
AU - Anthopoulos, Thomas D.
N1 - Funding Information:
T.D.A., I.I., and A.F.P acknowledge the financial support from Cambridge Display Technology Limited (Company No. 2672530). Q.Z., J.L., and X.X.Z. are supported financially by KAUST. O.S. acknowledges the support of the Center for Absorption in Science of the Ministry of Immigrant Absorption under the framework of the KAMEA Program.
Publisher Copyright:
© 2016 Author(s)
PY - 2016/12/26
Y1 - 2016/12/26
N2 - We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT) and the p-type dopant C60F48 was employed, whereas the isotype In2O3/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm2/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.
AB - We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT) and the p-type dopant C60F48 was employed, whereas the isotype In2O3/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm2/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.
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U2 - 10.1063/1.4972988
DO - 10.1063/1.4972988
M3 - Article
AN - SCOPUS:85008929507
SN - 0003-6951
VL - 109
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 26
M1 - 263301
ER -