Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

Ivan Isakov, Alexandra F. Paterson, Olga Solomeshch, Nir Tessler, Qiang Zhang, Jun Li, Xixiang Zhang, Zhuping Fei, Martin Heeney, Thomas D. Anthopoulos

Research output: Contribution to journalArticle

Abstract

We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT) and the p-type dopant C60F48 was employed, whereas the isotype In2O3/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm2/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

Original languageEnglish (US)
Article number263301
JournalApplied Physics Letters
Volume109
Issue number26
DOIs
StatePublished - Dec 26 2016

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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