Hydrogen and deuterium in bond-centered (BC) and platelet-like configurations were detected in hydrogenated (and deuterated) amorphous silicon thin films deposited from SiH 4 and SiD 4 plasmas. Infrared absorptions due to these configurations were measured using in situ multiple total internal reflection Fourier transform infrared spectroscopy in a differential mode, where changes in the as-deposited a-Si:H(D) films were observed during D 2(H 2) plasma exposure. This method coupled with preferential replacement of H(D) by D(H) in BC and platelet-like configurations over the isolated bulk SiH(SiD) configurations enabled detection of these modes without interference from the strong SiH(SiD) absorptions. The Si-H(D) stretching modes for BC hydrogen and BC deuterium were observed at ∼1950 and ∼1420 cm -1, respectively, while those for platelet-like hydrogen and deuterium were detected at ∼2033 and ∼1480 cm -1, respectively.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Nov 2004|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering