Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon

Sumit Agarwal; Bram Hoex; M. C.M. Van De Banden; Dimitrios Maraudas; Eray S. Aydil

doi:10.1116/1.1824191

Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon

Sumit Agarwal, Bram Hoex, M. C.M. Van De Banden, Dimitrios Maraudas, Eray S. Aydil

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Hydrogen and deuterium in bond-centered (BC) and platelet-like configurations were detected in hydrogenated (and deuterated) amorphous silicon thin films deposited from SiH ₄ and SiD ₄ plasmas. Infrared absorptions due to these configurations were measured using in situ multiple total internal reflection Fourier transform infrared spectroscopy in a differential mode, where changes in the as-deposited a-Si:H(D) films were observed during D ₂(H ₂) plasma exposure. This method coupled with preferential replacement of H(D) by D(H) in BC and platelet-like configurations over the isolated bulk SiH(SiD) configurations enabled detection of these modes without interference from the strong SiH(SiD) absorptions. The Si-H(D) stretching modes for BC hydrogen and BC deuterium were observed at ∼1950 and ∼1420 cm ^-1, respectively, while those for platelet-like hydrogen and deuterium were detected at ∼2033 and ∼1480 cm ^-1, respectively.

Original language	English (US)
Pages (from-to)	2719-2726
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	6
DOIs	https://doi.org/10.1116/1.1824191
State	Published - Nov 2004

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon",

abstract = "Hydrogen and deuterium in bond-centered (BC) and platelet-like configurations were detected in hydrogenated (and deuterated) amorphous silicon thin films deposited from SiH 4 and SiD 4 plasmas. Infrared absorptions due to these configurations were measured using in situ multiple total internal reflection Fourier transform infrared spectroscopy in a differential mode, where changes in the as-deposited a-Si:H(D) films were observed during D 2(H 2) plasma exposure. This method coupled with preferential replacement of H(D) by D(H) in BC and platelet-like configurations over the isolated bulk SiH(SiD) configurations enabled detection of these modes without interference from the strong SiH(SiD) absorptions. The Si-H(D) stretching modes for BC hydrogen and BC deuterium were observed at ∼1950 and ∼1420 cm -1, respectively, while those for platelet-like hydrogen and deuterium were detected at ∼2033 and ∼1480 cm -1, respectively.",

author = "Sumit Agarwal and Bram Hoex and {Van De Banden}, {M. C.M.} and Dimitrios Maraudas and Aydil, {Eray S.}",

note = "Funding Information: This work was supported by the NSF/DoE Partnership for Basic Plasma Science and Engineering (Award Nos. ECS-0078711, ECS-0317345, and ECS-0317459) and by the Camille and Henry Dreyfus Foundation through the Camille Dreyfus Teacher-Scholar award to D.M.",

year = "2004",

month = nov,

doi = "10.1116/1.1824191",

language = "English (US)",

volume = "22",

pages = "2719--2726",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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AU - Agarwal, Sumit

AU - Hoex, Bram

AU - Van De Banden, M. C.M.

AU - Maraudas, Dimitrios

AU - Aydil, Eray S.

N1 - Funding Information: This work was supported by the NSF/DoE Partnership for Basic Plasma Science and Engineering (Award Nos. ECS-0078711, ECS-0317345, and ECS-0317459) and by the Camille and Henry Dreyfus Foundation through the Camille Dreyfus Teacher-Scholar award to D.M.

PY - 2004/11

Y1 - 2004/11

N2 - Hydrogen and deuterium in bond-centered (BC) and platelet-like configurations were detected in hydrogenated (and deuterated) amorphous silicon thin films deposited from SiH 4 and SiD 4 plasmas. Infrared absorptions due to these configurations were measured using in situ multiple total internal reflection Fourier transform infrared spectroscopy in a differential mode, where changes in the as-deposited a-Si:H(D) films were observed during D 2(H 2) plasma exposure. This method coupled with preferential replacement of H(D) by D(H) in BC and platelet-like configurations over the isolated bulk SiH(SiD) configurations enabled detection of these modes without interference from the strong SiH(SiD) absorptions. The Si-H(D) stretching modes for BC hydrogen and BC deuterium were observed at ∼1950 and ∼1420 cm -1, respectively, while those for platelet-like hydrogen and deuterium were detected at ∼2033 and ∼1480 cm -1, respectively.

AB - Hydrogen and deuterium in bond-centered (BC) and platelet-like configurations were detected in hydrogenated (and deuterated) amorphous silicon thin films deposited from SiH 4 and SiD 4 plasmas. Infrared absorptions due to these configurations were measured using in situ multiple total internal reflection Fourier transform infrared spectroscopy in a differential mode, where changes in the as-deposited a-Si:H(D) films were observed during D 2(H 2) plasma exposure. This method coupled with preferential replacement of H(D) by D(H) in BC and platelet-like configurations over the isolated bulk SiH(SiD) configurations enabled detection of these modes without interference from the strong SiH(SiD) absorptions. The Si-H(D) stretching modes for BC hydrogen and BC deuterium were observed at ∼1950 and ∼1420 cm -1, respectively, while those for platelet-like hydrogen and deuterium were detected at ∼2033 and ∼1480 cm -1, respectively.

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Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon

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